Data Sheet

ManualsBrandsON SEMICONDUCTOR ManualsBJTs & IGBTsTransistor (BJT) - Discrete TO 92 3 1

November, 2013 − Rev. 8

1 Publication Order Number:

BC337/D

BC337, BC337-25,

BC337-40

Amplifier Transistors

NPN Silicon

Features

• These are Pb−Free Devices

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector − Emitter Voltage V

CEO

45 Vdc

Collector − Base Voltage V

CBO

50 Vdc

Emitter − Base Voltage V

EBO

5.0 Vdc

Collector Current − Continuous I

800 mAdc

Total Device Dissipation @ T

= 25°C

Derate above 25°C

625

5.0

mW/°C

Total Device Dissipation @ T

= 25°C

Derate above 25°C

1.5

mW/°C

Operating and Storage Junction

Temperature Range

, T

stg

−55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient

200 °C/W

Thermal Resistance, Junction−to−Case

83.3 °C/W

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com

See detailed ordering and shipping information in the package

dimensions section on page 4 of this data sheet.

ORDERING INFORMATION

COLLECTOR

BASE

EMITTER

MARKING DIAGRAM

BC33

7−xx

AYWW G

BC337−xx = Device Code

(Refer to page 4)

A = Assembly Location

Y = Year

WW = Work Week

G =Pb−Free Package

(Note: Microdot may be in either location)

BENT LEAD

TAPE & REEL

AMMO PACK

STRAIGHT LEAD

BULK PACK

TO−92

CASE 29

STYLE 17

Summary of content (5 pages)

PAGE 1
BC337, BC337-25, BC337-40 Amplifier Transistors NPN Silicon http://onsemi.com Features • These are Pb−Free Devices COLLECTOR 1 2 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 45 Vdc Collector − Base Voltage VCBO 50 Vdc Emitter − Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 800 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.
PAGE 2
BC337, BC337−25, BC337−40 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Collector −Emitter Breakdown Voltage (IC = 10 mA, IB = 0) V(BR)CEO 45 − − Vdc Collector −Emitter Breakdown Voltage (IC = 100 mA, IE = 0) V(BR)CES 50 − − Vdc Emitter −Base Breakdown Voltage (IE = 10 mA, IC = 0) V(BR)EBO 5.
PAGE 3
BC337, BC337−25, BC337−40 1.0 s 1000 1.0 ms TJ = 135°C 100 ms hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) 1000 dc TC = 25°C dc TA = 25°C 100 10 1.0 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT (APPLIES BELOW RATED VCEO) 3.0 10 30 VCE, COLLECTOR-EMITTER VOLTAGE VCE = 1 V TJ = 25°C 100 10 0.1 100 1.0 10 100 IC, COLLECTOR CURRENT (MA) Figure 3. DC Current Gain 1.0 1.0 TJ = 25°C TA = 25°C 0.8 0.6 IC = 10 mA 0.4 100 mA 300 mA 500 mA VBE(on) @ VCE = 1 V 0.6 0.4 0.2 0.
PAGE 4
BC337, BC337−25, BC337−40 ORDERING INFORMATION Device Marking Package Shipping† BC337G 7 5000 Units / Bulk BC337RL1G 7 2000 / Tape & Reel BC337−025G 7−25 5000 Units / Bulk BC337−25RL1G 7−25 2000 / Tape & Reel TO−92 (Pb−Free) BC337−25RLRAG 7−25 2000 / Tape & Reel BC337−25ZL1G 7−25 2000 / Ammo Box BC337−040G 7−40 5000 Units / Bulk BC337−40RL1G 7−40 2000 / Tape & Reel BC337−40ZL1G 7−40 2000 / Ammo Box †For information on tape and reel specifications, including part orientation an
PAGE 5
BC337, BC337−25, BC337−40 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM A B STRAIGHT LEAD BULK PACK R P L SEATING PLANE K D X X G J H V C SECTION X−X N 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.