Data Sheet

BC337 / BC338 — NPN Epitaxial Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC337 / BC338 Rev. 1.5
September 2015
BC337 / BC338
NPN Epitaxial Silicon Transistor
Features
• Switching and Amplifier Applications
• Suitable for AF-Driver Stages and Low-Power Output Stages
• Complement to BC327 / BC328
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Part Number Top Mark Package Packing Method
BC33716BU BC33716 TO-92 3L Bulk
BC33716TA BC33716 TO-92 3L Ammo
BC33716TFR BC33716 TO-92 3L Tape and Reel
BC33725BU BC33725 TO-92 3L Bulk
BC33725TA BC33725 TO-92 3L Ammo
BC33725TAR BC33725 TO-92 3L Ammo
BC33725TF BC33725 TO-92 3L Tape and Reel
BC33725TFR BC33725 TO-92 3L Tape and Reel
BC33740BU BC33740 TO-92 3L Bulk
BC33740TA BC33740 TO-92 3L Ammo
BC33825TA BC33825 TO-92 3L Ammo
Symbol Parameter Value Unit
V
CES
Collector-Emitter Voltage
BC337 50
V
BC338 30
V
CEO
Collector-Emitter Voltage
BC337 45
V
BC338 25
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current (DC) 800 mA
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55 to 150 °C
1. Collector
1
2
3
1
2
3
Straight Lead Bent Lead
TO-92
Bulk Packing Tape & Reel
Ammo Packing
2. Base
3. Emitter