Data Sheet

© Semiconductor Components Industries, LLC, 2011
September, 2011 Rev. 6
1 Publication Order Number:
BC327/D
BC327, BC327-16,
BC327-25, BC327-40
Amplifier Transistors
PNP Silicon
Features
These are PbFree Devices*
MAXIMUM RATINGS
Rating Symbol Value Unit
CollectorEmitter Voltage V
CEO
45 Vdc
CollectorEmitter Voltage V
CES
50 Vdc
EmitterBase Voltage V
EBO
5.0 Vdc
Collector Current Continuous I
C
800 mAdc
Total Power Dissipation @ T
A
= 25°C
Derate above T
A
= 25°C
P
D
625
5.0
mW
mW/°C
Total Power Dissipation @ T
A
= 25°C
Derate above T
A
= 25°C
P
D
1.5
12
W
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, JunctiontoAmbient
R
q
JA
200 °C/W
Thermal Resistance, JunctiontoCase
R
q
JC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
BCxxx= Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
MARKING DIAGRAM
(Note: Microdot may be in either location)
http://onsemi.com
BC
xxx
AYWW G
G
COLLECTOR
1
2
BASE
3
EMITTER
See detailed ordering, marking, and shipping information in
the package dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
1
2
3
1
2
BENT LEAD
TAPE & REEL
AMMO PACK
STRAIGHT LEAD
BULK PACK
3
TO92
CASE 29
STYLE 17

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