Datasheet

BAV99L, SBAV99L
www.onsemi.com
2
OFF CHARACTERISTICS (T
A
= 25°C unless otherwise noted) (Each Diode)
Characteristic
Symbol Min Max Unit
Reverse Breakdown Voltage,
(I
(BR)
= 100 mA)
V
(BR)
100 −
Vdc
Reverse Voltage Leakage Current,
(V
R
= 100 Vdc)
(V
R
= 25 Vdc, T
J
= 150°C)
(V
R
= 70 Vdc, T
J
= 150°C)
I
R
−
−
−
1.0
30
50
mAdc
Diode Capacitance,
(V
R
= 0, f = 1.0 MHz)
C
D
− 1.5
pF
Forward Voltage,
(I
F
= 1.0 mAdc)
(I
F
= 10 mAdc)
(I
F
= 50 mAdc)
(I
F
= 150 mAdc)
V
F
−
−
−
−
715
855
1000
1250
mVdc
Reverse Recovery Time,
(I
F
= I
R
= 10 mAdc, i
R(REC)
= 1.0 mAdc) R
L
= 100 W
t
rr
− 6.0
ns
Forward Recovery Voltage,
(I
F
= 10 mA, t
r
= 20 ns)
V
FR
− 1.75
V
CURVES APPLICABLE TO EACH DIODE
V
F
, FORWARD VOLTAGE (V) V
R
, REVERSE VOLTAGE (V)
Figure 1. Forward Voltage Figure 2. Leakage Current
Figure 3. Capacitance
0.1
1
10
100
1000
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
T
A
= 85°C
T
A
= 55°C
T
A
= 25°C
T
A
= −40°C
T
A
= −55°C
T
A
= 150°C
I
F
, FORWARD CURRENT (mA)
T
A
= 125°C
0.001
0.01
0.1
1.0
10
100
0 10203040506070
T
A
= 85°C
T
A
= 55°C
T
A
= 125°C
T
A
= 150°C
T
A
= 25°C
I
R
, REVERSE CURRENT (mA)
0.45
0.47
0.49
0.51
0.53
0.55
0.57
0.59
0.61
012345678
V
R
, REVERSE VOLTAGE (V)
C
d
, DIODE CAPACITANCE (pF)
0 1.1 1.2