Data Sheet

BAV99 — 200 mA 70 V High Conductance Ultra-Fast Switching Diode
www.onsemi.com
2
Absolute Maximum Ratings
(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Note:
1. These ratings are based on a maximum junction temperature of 150°C.
These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or
low-duty cycle operations.
Thermal Characteristics
(2)
Values are at T
A
= 25°C unless otherwise noted.
Note:
2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol Parameter Value Unit
V
RRM
Maximum Repetitive Reverse Voltage 70 V
I
F(AV)
Average Rectified Forward Current 200 mA
I
FSM
Non-Repetitive Peak
Forward Surge Current
Pulse Width = 1.0 Second 1.0
A
Pulse Width = 300 Microseconds 8.0
T
STG
Storage Temperature Range -55 to +150 °C
T
J
Operating Junction Temperature Range -55 to +150 °C
Symbol Parameter Value Unit
P
D
Power Dissipation 350 mW
R
θJA
Thermal Resistance, Junction to Ambient 357 °C/W
Symbol Parameter Conditions Min. Max. Unit
V
R
Breakdown Voltage, per Diode I
R
= 100 μA70 V
V
F
Forward Voltage, per Diode
I
F
= 1 mA 715
mV
I
F
= 10 mA 855
I
F
= 50 mA 1.00
V
I
F
= 150 mA 1.25
I
R
Reverse Leakage, per Diode
V
R
= 70 V 2.5
μAV
R
= 25 V, T
A
= 150°C30.0
V
R
= 70 V, T
A
= 150°C50.0
C
T
Total Capacitance, per Diode V
R
= 0 V, f = 1.0 MHz 1.5 pF
t
rr
Reverse-Recovery Time,
per Diode
I
F
= I
R
= 10 mA,
I
RR
= 1 mA,
R
L
= 100 Ω
6.0 ns