Data Sheet
BAV19 / BAV20 / BAV21
BAV19/20/21, Rev. C
BAV19 / 20 / 21
Small Signal Diode
Absolute Maximum Ratings* T
A
= 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
DO-35
Color Band Denotes Cathode
2001 Fairchild Semiconductor Corporation
Electrical Characteristics T
A
= 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V
RRM
Maximum Repetitive Reverse Voltage
BAV19
BAV20
BAV21
120
200
250
V
V
V
I
F(AV)
Average Rectified Forward Current 200 mA
I
FSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
1.0
4.0
A
A
T
stg
Storage Temperature Range -65 to +200
°
C
T
J
Operating Junction Temperature 175
°
C
Symbol
Parameter
Value
Units
P
D
Power Dissipation 500 mW
R
θ
JA
Thermal Resistance, Junction to Ambient 300
°
C/W
Symbol
Parameter
Test Conditions
Min
Max
Units
V
R
Breakdown Voltage
BAV19
BAV20
BAV21
I
R
= 100
µ
A
I
R
= 100
µ
A
I
R
= 100
µ
A
120
200
250
V
V
V
V
F
Forward Voltage I
F
= 100 mA
I
F
= 200 mA
1.0
1.25
V
V
I
R
Reverse Current
BAV19
BAV20
BAV21
V
R
= 100 V
V
R
= 100 V, T
A
= 150
°
C
V
R
= 150 V
V
R
= 150 V, T
A
= 150
°
C
V
R
= 200 V
V
R
= 200 V, T
A
= 150
°
C
100
100
100
100
100
100
nA
µ
A
nA
µ
A
nA
µ
A
C
T
Total Capacitance V
R
= 0, f
= 1.0 MHz 5.0 pF
t
rr
Reverse Recovery Time I
F
= I
R
= 30 mA, I
RR
= 3.0 mA,
R
L
= 100
Ω
50 ns