Datasheet

ManualsBrandsON Semiconductor ManualsDiodesSchottky Diode Dual 0.2 A 30 V SOT-23

Publication Order Number:

BAT54SLT1/D

December, 2014 − Rev. 16

BAT54SL

Dual Series Schottky

Barrier Diodes

These Schottky barrier diodes are designed for high speed switching

applications, circuit protection, and voltage clamping. Extremely low

forward voltage reduces conduction loss. Miniature surface mount

package is excellent for hand held and portable applications where

space is limited.

Features

• Extremely Fast Switching Speed

• Low Forward Voltage − 0.35 V (Typ) @ I

= 10 mAdc

• S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant*

MAXIMUM RATINGS (T

= 25°C unless otherwise noted)

Rating

Symbol Value Unit

Reverse Voltage V

30 V

Forward Power Dissipation

@ T

= 25°C

Derate above 25°C

225

1.8

mW/°C

Forward Current (DC) I

200 Max mA

Non−Repetitive Peak Forward Current

< 10 msec

Square pulse = 1 sec

FSM

600

1.0

Repetitive Peak Forward Current

Pulse Wave = 1 sec,

Duty Cycle = 66%

FRM

300

Junction Temperature T

−55 to 150 °C

Storage Temperature Range T

stg

−55 to +150 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

30 VOLT

DUAL HOT−CARRIER

DETECTOR AND SWITCHING

DIODES

CATHODE/ANODE

ANODE

CATHODE

Device Package Shipping

†

ORDERING INFORMATION

www.onsemi.com

BAT54SLT1G SOT−23

(Pb−Free)

3,000 / Tape & Ree

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

SOT−23

CASE 318

STYLE 11

MARKING DIAGRAM

LD3M G

LD3 = Device Code

M = Date Code*

G = Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

SBAT54SLT1G SOT−23

(Pb−Free)

3,000 / Tape & Ree

Summary of content (4 pages)

PAGE 1
BAT54SL Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features • Extremely Fast Switching Speed • Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mAdc • S Prefix for Automotive and Other Applications Requiring Unique • www.onsemi.
PAGE 2
BAT54SL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Symbol Characteristic Reverse Breakdown Voltage (IR = 10 A) Min Typ Max 30 − − − 7.6 10 − 0.5 2.0 − − − − − 0.22 0.29 0.35 0.41 0.52 0.24 0.32 0.40 0.50 0.80 − − 5.0 Unit V(BR)R Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT Reverse Leakage (VR = 25 V) IR Forward Voltage (IF = 0.1 mA) (IF = 1.0 mA) (IF = 10 mA) (IF = 30 mA) (IF = 100 mA) VF Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.
PAGE 3
BAT54SL 100 IF, FORWARD CURRENT (mA) 1 25°C 85°C 10 1 50°C 1.0 25°C 0.1 0.0 −40°C −55°C 0.2 0.3 0.4 0.1 0.5 VF, FORWARD VOLTAGE (VOLTS) 0.6 Figure 2. Forward Voltage 1000 IR, REVERSE CURRENT ( A) TA = 150°C 100 TA = 125°C 10 1.0 TA = 85°C 0.1 0.01 TA = 25°C 0.001 0 5 15 25 10 20 VR, REVERSE VOLTAGE (VOLTS) 30 Figure 3. Leakage Current CT, TOTAL CAPACITANCE (pF) 14 12 10 8 6 4 2 0 0 5 10 15 20 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Total Capacitance www.onsemi.
PAGE 4
BAT54SL PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 b 0.25 e q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.