Datasheet

BAS19L, BAS20L, BAS21L, BAS21DW5
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2
THERMAL CHARACTERISTICS (SOT−23)
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 2)
T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance
Junction−to−Ambient (SOT−23)
R

JA
556 °C/W
Total Device Dissipation Alumina Substrate
(Note 3)
T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance Junction−to−Ambient
R

JA
417 °C/W
Junction and Storage
Temperature Range
T
J
, T
stg
−55 to +150 °C
THERMAL CHARACTERISTICS (SC−88A)
Characteristic Symbol Max Unit
Power Dissipation (Note 4) P
D
385 mW
Thermal Resistance −
Junction−to−Ambient
Derate Above 25°C
R

JA
328
3.0
°C/W
mW/°C
Maximum Junction Temperature T
Jmax
150 °C
Operating Junction and Storage Temperature Range T
J
, T
stg
−55 to +150 °C
2. FR−5 = 1.0 0.75 0.062 in.
3. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
4. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in.
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
Reverse Voltage Leakage Current
(V
R
= 100 Vdc) BAS19
(V
R
= 150 Vdc) BAS20
(V
R
= 200 Vdc) BAS21
(V
R
= 100 Vdc, T
J
= 150°C) BAS19
(V
R
= 150 Vdc, T
J
= 150°C) BAS20
(V
R
= 200 Vdc, T
J
= 150°C) BAS21
I
R
−
−
−
−
−
−
0.1
0.1
0.1
100
100
100
Adc
Reverse Breakdown Voltage
(I
BR
= 100 Adc) BAS19
(I
BR
= 100 Adc) BAS20
(I
BR
= 100 Adc) BAS21
V
(BR)
120
200
250
−
−
−
Vdc
Forward Voltage
(I
F
= 100 mAdc)
(I
F
= 200 mAdc)
V
F
−
−
1.0
1.25
Vdc
Diode Capacitance (V
R
= 0, f = 1.0 MHz) C
D
− 5.0 pF
Reverse Recovery Time (I
F
= I
R
= 30 mAdc, I
R(REC)
= 3.0 mAdc, R
L
= 100) t
rr
− 50 ns