Data Sheet

BAS16H, SBAS16H
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(V
R
= 100 Vdc)
(V
R
= 75 Vdc, T
J
= 150°C)
(V
R
= 25 Vdc, T
J
= 150°C)
I
R
−
−
−
1.0
50
30
mAdc
Reverse Breakdown Voltage
(I
BR
= 100 mAdc)
V
(BR)
100 − Vdc
Forward Voltage
(I
F
= 1.0 mAdc)
(I
F
= 10 mAdc)
(I
F
= 50 mAdc)
(I
F
= 150 mAdc)
V
F
−
−
−
−
715
855
1000
1250
mV
Diode Capacitance
(V
R
= 0, f = 1.0 MHz)
C
D
− 2.0 pF
Forward Recovery Voltage
(I
F
= 10 mAdc, t
r
= 20 ns)
V
FR
− 1.75 Vdc
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc, R
L
= 50 W)
t
rr
− 6.0 ns
Stored Charge
(I
F
= 10 mAdc to V
R
= 5.0 Vdc,
R
L
= 500 W)
Q
S
− 45 pC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.