Data Sheet

BAS16 — Small Signal Diode
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
BAS16 Rev. 1.3 3
Typical Performance Characteristics
Figure 1. Reverse Voltage vs. Reverse Current
BV - 1.0 to 100 μA
Figure 2. Reverse Current vs. Reverse Voltage
I
R
- 10 to 100 V
Figure 3. Forward Voltage vs. Forward Current
V
F
- 1.0 to 100 μA
Figure 4. Forward Voltage vs. Forward Current
V
F
- 1.0 to 100 mA
Figure 5. Forward Voltage vs. Forward Current
V
F
- 10 to 800 mA
Figure 6. Total Capacitance
1 2 3 5 10 20 30 50 100
11 0
120
130
140
150
Reverse Current, I
R
[uA]
R
Ta= 25°C
Reverse Voltage, V
R
[v]
Ta= 25°C
GENERAL R ULE: T he Reverse Current of a diode will appr oximately
double for every ten (10) Degree C increase in Temperature
10 20 30 50 70 100
0
50
100
150
200
250
300
Reverse Voltage, V
R
[v]
Reverse Current, I
R
[nA]
225
1 2 3 5 10 20 30 50 100
250
300
350
400
450
Forward Current, I
F
[uA]
Forward Voltage, V
F
[mV]
F
F
485
Ta= 25°C
0.1 0.2 0.3 0.5 1 2 3 5 10
450
500
550
600
650
700
Forward Current, I
F
[mA]
Forward Voltage, V
F
[mV]
F
725
Ta= 25°C
10 20 30 50 100 200 300 500
0.6
0.8
1
1.2
1.4
Forward Current, I
F
[mA]
Forward Voltage, V
F
[V]
F
1.5
Ta = 25 °C
02468101214
1
1.1
1.2
1.3
Reverse Voltage [V]
Total Capacitance, C
T
[pF]
Ta = 2 5
°
C
15