Data Sheet

BAS16 — Small Signal Diode
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
BAS16 Rev. 1.3 2
Thermal Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol Parameter Value Unit
P
D
Power Dissipation 350 mW
R
θJA
Thermal Resistance, Junction-to-Ambient 357 °C/W
Symbol Parameter Conditions Min. Max. Unit
V
R
Breakdown Voltage I
R
= 5.0 μA85V
V
F
Forward Voltage
I
F
= 1.0 mA 715 mV
I
F
= 10 mA 855 mV
I
F
= 50 mA 1.0 V
I
F
= 150 mA 1.25 V
I
R
Reverse Current
V
R
= 75 V 1.0
μAV
R
= 25 V, T
A
= 150°C 30
V
R
= 75 V, T
A
= 150°C 50
C
T
Total Capacitance V
R
= 0, f = 1.0 MHz 2.0 pF
t
rr
Reverse Recovery Time
I
F
= I
R
= 10 mA, I
RR
= 1.0 mA,
R
L
= 100 Ω
6.0 ns