Data Sheet
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M Rev. 1.3 4
4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M — 6-Pin General Purpose Phototransistor Optocouplers
Electrical Characteristics
TA = 25°C unless otherwise specified.
Individual Component Characteristics
Transfer Characteristics
Isolation Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Unit
EMITTER
V
F
Input Forward Voltage I
F
= 10 mA 1.18 1.50 V
I
R
Reverse Leakage Current V
R
= 6.0 V 0.001 10 µA
DETECTOR
BV
CEO
Collector-to-Emitter Breakdown Voltage I
C
= 1.0 mA, I
F
= 0 30 100 V
BV
CBO
Collector-to-Base Breakdown Voltage I
C
= 100 µA, I
F
= 0 70 120 V
BV
ECO
Emitter-to-Collector Breakdown Voltage I
E
= 100 µA, I
F
= 0 7 10 V
I
CEO
Collector-to-Emitter Dark Current V
CE
= 10 V, I
F
= 0 1 50 nA
I
CBO
Collector-to-Base Dark Current V
CB
= 10 V 20 nA
C
CE
Capacitance V
CE
= 0 V, f = 1 MHz 8 pF
Symbol Parameter Test Conditions Device Min. Typ. Max. Unit
DC CHARACTERISTICS
CTR
Current Transfer Ratio,
Collector-to-Emitter
I
F
= 10 mA, V
CE
= 10 V
4N35M, 4N36M,
4N37M
100 %
4N25M, 4N26M 20 %
4N27M, 4N28M 10 %
I
F
= 10 mA, V
CE
= 10 V,
T
A
= -55°C
4N35M, 4N36M,
4N37M
40 %
I
F
= 10 mA, V
CE
= 10 V,
T
A
= +100°C
4N35M, 4N36M,
4N37M
40 %
V
CE (SAT)
Collector-to-Emitter
Saturation Voltage
I
C
= 2 mA, I
F
= 50 mA
4N25M, 4N26M,
4N27M, 4N28M
0.5 V
I
C
= 0.5 mA, I
F
= 10 mA
4N35M, 4N36M,
4N37M
0.3 V
AC CHARACTERISTICS
T
ON
Non-Saturated
Turn-on Time
I
F
= 10 mA, V
CC
= 10 V,
R
L
= 100
Ω
(Figure 13)
4N25M, 4N26M,
4N27M, 4N28M
2µs
I
C
= 2 mA, V
CC
= 10 V,
R
L
= 100
Ω
(Figure 13)
4N35M, 4N36M,
4N37M
210µs
T
OFF
Turn-off Time
I
F
= 10 mA, V
CC
= 10 V,
R
L
= 100
Ω
(Figure 13)
4N25M, 4N26M,
4N27M, 4N28M
2µs
I
C
= 2 mA, V
CC
= 10 V,
R
L
= 100
Ω
(Figure 13)
4N35M, 4N36M,
4N37M
210µs
Symbol Characteristic Test Conditions Min. Typ. Max. Unit
V
ISO
Input-Output Isolation Voltage t = 1 Minute 4170 VAC
RMS
C
ISO
Isolation Capacitance V
I-O
= 0 V, f = 1 MHz 0.2 pF
R
ISO
Isolation Resistance V
I-O
= ±500 VDC, T
A
= 25°C 10
11
Ω