Data Sheet

2SC5200/FJL4315 — NPN Epitaxial Silicon Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
2SC5200/FJL4315 Rev. C 4
Typical Characteristics
Figure 7. Power Derating Figure 8. Safe Operating Area
Figure 9. Power Derating
1E-6 1E-5 1E-4 1E-3 0.01 0.1 1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Transient Thermal Resistance, R
thjc
[
o
C / W]
Pulse duration [sec]
110100
0.01
0.1
1
10
100
*SINGLE NONREPETITIVE
PULSE T
C
=25[
o
C]
10ms*
100ms*
DC
I
C
MAX. (Pulsed*)
I
C
MAX. (DC)
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
20
40
60
80
100
120
140
160
P
C
[W], POWER DISSIPATION
T
C
[
o
C], CASE TEMPERATURE