Data Sheet

2SC5200/FJL4315 — NPN Epitaxial Silicon Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
2SC5200/FJL4315 Rev. C 3
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain ( R grade )
Figure 3. DC current Gain ( O grade ) Figure 4. Collector-Emitter Saturation Voltage
Figure 5. Base-Emitter On Voltage Figure 6. Base-Emitter Saturation Voltage
0 2 4 6 8 10 12 14 16 18 20
0
2
4
6
8
10
12
14
16
I
B
= 0
I
B
=200mA
I
B
= 120mA
I
B
= 140mA
I
B
= 160mA
I
B
= 180mA
I
B
= 100mA
I
B
= 60mA
I
B
= 80mA
I
B
= 40mA
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
110
1
10
100
Vce=5V
Tj=-25
o
C
Tj=25
o
C
Tj=125
o
C
h
FE
, DC CURRENT GAIN
Ic[A], COLLECTOR CURRENT
110
1
10
100
Vce=5V
Tj=-25
o
C
Tj=25
o
C
Tj=125
o
C
h
FE
, DC CURRENT GAIN
Ic[A], COLLECTOR CURRENT
0.1 1 10
1
10
100
1000
10000
Ic=10Ib
Tj=-25
o
C
Tj=25
o
C
Tj=125
o
C
Vce(sat)[mV], SATURATION VOLTAGE
Ic[A], COLLECTOR CURRENT
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
0
2
4
6
8
10
12
V
CE
= 5V
I
C
[A], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
0.1 1 10
100
1000
10000
Ic=10Ib
Tj=-25
o
C
Tj=25
o
C
Tj=125
o
C
Vbe(sat)[mV], SATURATION VOLTAGE
Ic[A], COLLECTOR CURRENT