Data Sheet

2SC5200/FJL4315 — NPN Epitaxial Silicon Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
2SC5200/FJL4315 Rev. C 2
Electrical Characteristics* T
a
=25°C unless otherwise noted
* Pulse Test: Pulse Width=20µs, Duty Cycle≤2%
Ordering Information
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
Collector-Base Breakdown Voltage I
C
=5mA, I
E
=0 250 V
BV
CEO
Collector-Emitter Breakdown Voltage I
C
=10mA, R
BE
=∞ 250 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
=5mA, I
C
=0 5 V
I
CBO
Collector Cut-off Current V
CB
=230V, I
E
=0 5.0 µA
I
EBO
Emitter Cut-off Current V
EB
=5V, I
C
=0 5.0 µA
h
FE1
DC Current Gain V
CE
=5V, I
C
=1A 55 160
h
FE2
DC Current Gain V
CE
=5V, I
C
=7A 35 60
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
=8A, I
B
=0.8A 0.4 3.0 V
V
BE
(on) Base-Emitter On Voltage V
CE
=5V, I
C
=7A 1.0 1.5 V
f
T
Current Gain Bandwidth Product V
CE
=5V, I
C
=1A 30 MHz
C
ob
Output Capacitance V
CB
=10V, f=1MHz 200 pF
Part Number Marking Package Packing Method Remarks
2SC5200RTU C5200R TO-264 TUBE hFE1 R grade
2SC5200OTU C5200O TO-264 TUBE hFE1 O grade
FJL4315RTU J4315R TO-264 TUBE hFE1 R grade
FJL4315OTU J4315O TO-264 TUBE hFE1 O grade