Data Sheet

2SA1943/FJL4215 — PNP Epitaxial Silicon Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
2SA1943/FJL4215 Rev. C 3
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain ( R Grade )
Figure 3. DC current Gain ( O Grade ) Figure 4. Collector-Emitter Saturation Voltage
Figure 5. Base-Emitter Saturation Voltage Figure 6. Base-Emitter On Voltage
-0 -2 -4 -6 -8 -10
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
I
B
=
-
5
0
0
m
A
I
B
=
-
6
0
0
m
A
I
B
=
-
4
0
0
m
A
I
B
= -700mA
I
B
= -300mA
I
B
= -900mA
I
B
= -200mA
I
B
= -800mA
I
B
= -1A
I
B
= -100mA
I
C
[mA], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0.1 1 10
1
10
100
V
CE
= -5V
Tj = -25
o
C
Tj = 25
o
C
Tj = 125
o
C
h
FE
, DC CURRENT GAIN
I
C
[A], COLLECTOR CURRENT
0.1 1 10
1
10
100
V
CE
= -5V
Tj = -25
o
C
Tj = 25
o
C
Tj = 125
o
C
h
FE
, DC CURRENT GAIN
I
C
[A], COLLECTOR CURRENT
0.1 1 10
10
100
1000
10000
Ic=-10Ib
Tj=-25
o
C
Tj=25
o
C
Tj=125
o
C
Vce(sat)[mV], SATURATION VOLTAGE
Ic[A], COLLECTOR CURRENT
0.1 1 10
100
1000
10000
Ic=-10Ib
Tj=-25
o
C
Tj=25
o
C
Tj=125
o
C
Vbe(sat)[mV], SATURATION VOLTAGE
Ic[A], COLLECTOR CURRENT
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
0
2
4
6
8
10
12
14
V
CE
= 5V
I
C
[A], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE