Data Sheet

2SA1943/FJL4215 — PNP Epitaxial Silicon Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
2SA1943/FJL4215 Rev. C 2
Electrical Characteristics* T
a
=25°C unless otherwise noted
* Pulse Test: Pulse Width=20µs, Duty Cycle≤2%
Ordering Information
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
Collector-Base Breakdown Voltage I
C
=-5mA, I
E
=0 -250 V
BV
CEO
Collector-Emitter Breakdown Voltage I
C
=-10mA, R
BE
=∞ -250 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
=-5mA, I
C
=0 -5 V
I
CBO
Collector Cut-off Current V
CB
=-230V, I
E
=0 -5.0 µA
I
EBO
Emitter Cut-off Current V
EB
=-5V, I
C
=0 -5.0 µA
h
FE1
DC Current Gain V
CE
=-5V, I
C
=-1A 55 160
h
FE2
DC Current Gain V
CE
=-5V, I
C
=-7A 35 60
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
=-8A, I
B
=-0.8A -0.4 -3.0 V
V
BE
(on) Base-Emitter On Voltage V
CE
=-5V, I
C
=-7A -1.0 -1.5 V
f
T
Current Gain Bandwidth Product V
CE
=-5V, I
C
=-1A 30 MHz
C
ob
Output Capacitance V
CB
=-10V, f=1MHz 360 pF
Part Number Marking Package Packing Method Remarks
2SA1943RTU A1943R TO-264 TUBE hFE1 R grade
2SA1943OTU A1943O TO-264 TUBE hFE1 O grade
FJL4215RTU J4215R TO-264 TUBE hFE1 R grade
FJL4215OTU J4215O TO-264 TUBE hFE1 O grade