Data Sheet

2SA1943/FJL4215 — PNP Epitaxial Silicon Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
2SA1943/FJL4215 Rev. C 1
January 2009
2SA1943/FJL4215
PNP Epitaxial Silicon Transistor
Applications
• High-Fidelity Audio Output Amplifier
• General Purpose Power Amplifier
Features
• High Current Capability: I
C
= -17A.
• High Power Dissipation : 150watts.
• High Frequency : 30MHz.
• High Voltage : V
CEO
= -250V
• Wide S.O.A for reliable operation.
• Excellent Gain Linearity for low THD.
• Complement to 2SC5200/FJL4315.
• Full thermal and electrical Spice models are available.
• Same transistor is also available in:
-- TO3P package, 2SA1962/FJA4213 : 130 watts
-- TO220 package, FJP1943 : 80 watts
-- TO220F package, FJPF1943 : 50 watts
Absolute Maximum Ratings* T
a
= 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics* T
a
=25°C unless otherwise noted
* Device mounted on minimum pad size
h
FE
Classification
Symbol Parameter Ratings Units
BV
CBO
Collector-Base Voltage -250 V
BV
CEO
Collector-Emitter Voltage -250 V
BV
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current -17 A
I
B
Base Current -1.5 A
P
D
Total Device Dissipation(T
C
=25°C)
Derate above 25°C
150
1.04
W
W/°C
T
J
, T
STG
Junction and Storage Temperature - 50 ~ +150 °C
Symbol Parameter Max. Units
R
θJC
Thermal Resistance, Junction to Case 0.83 °C/W
Classification R O
h
FE1
55 ~ 110 80 ~ 160
1.Base 2.Collector 3.Emitter
1
TO-264