Data Sheet

2N7002W, 2V7002W
www.onsemi.com
4
TYPICAL CHARACTERISTICS
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Qg, TOTAL GATE CHARGE (nC)
0
.8
0.60.40.20
0
1
2
3
4
5
Figure 9. Diode Forward Voltage vs. Current
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
1.21.00.80.60.4
0.01
1
10
V
GS
, GATE−TO−SOURCE VOLTAGE (V
)
I
S
, SOURCE CURRENT (A)
T
J
= 25°C
I
D
= 0.2 A
201612840
0
10
20
30
C, CAPACITANCE (pF)
C
iss
C
oss
C
rss
T
J
= 25°C
V
GS
= 0 V
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
T
J
= 25°CT
J
= 85°C
V
GS
= 0 V
0.1
1.0E−10
1.0E−9
1.0E−8
1.0E−6
5 1015202530
Figure 10. Drain−to−Source Leakage Current
vs. Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
DSS
, LEAKAGE (A)
V
GS
= 0 V
T
J
= 150°C
T
J
= 125°C
T
J
= 85°C
35 40 45 50 55 6
0
1.0E−7
T
J
= 25°C