Data Sheet

2N7002W, 2V7002W
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter
Symbol Test Condition Min Typ Max Units
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
60 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
71 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 60 V
T
J
= 25°C 1.0
mA
T
J
= 150°C 15
mA
V
GS
= 0 V,
V
DS
= 50 V
T
J
= 25°C 100 nA
T
J
= 150°C 10
mA
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±20 V ±10
mA
V
DS
= 0 V, V
GS
= ±10 V 450 nA
V
DS
= 0 V, V
GS
= ±5.0 V 150 nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.0 2.5 V
Negative Threshold Temperature
Coefficient
V
GS(TH)
/T
J
4.0 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= 10 V, I
D
= 500 mA 1.19 1.6 W
V
GS
= 4.5 V, I
D
= 200 mA 1.33 2.5
Forward Transconductance g
FS
V
DS
= 5 V, I
D
= 200 mA 530 mS
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1 MHz,
V
DS
= 20 V
24.5
pF
Output Capacitance C
OSS
4.2
Reverse Transfer Capacitance C
RSS
2.2
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 10 V;
I
D
= 200 mA
0.7
nC
Threshold Gate Charge Q
G(TH)
0.1
Gate−to−Source Charge Q
GS
0.3
Gate−to−Drain Charge Q
GD
0.1
SWITCHING CHARACTERISTICS, V
GS
= V (Note 3)
Turn−On Delay Time
t
d(ON)
V
GS
= 10 V, V
DD
= 25 V,
I
D
= 500 mA, R
G
= 25 W
12.2
ns
Rise Time t
r
9.0
Turn−Off Delay Time t
d(OFF)
55.8
Fall Time t
f
29
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage V
SD
V
GS
= 0 V,
I
S
= 200 mA
T
J
= 25°C 0.8 1.2
V
T
J
= 85°C 0.7
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%
3. Switching characteristics are independent of operating junction temperatures