Datasheet

2N7002K, 2V7002K
www.onsemi.com
4
TYPICAL CHARACTERISTICS
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Qg, TOTAL GATE CHARGE (nC)
0
.8
0.60.40.20
0
1
2
3
4
5
Figure 9. Diode Forward Voltage vs. Current
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
1.21.00.80.60.4
0.01
1
10
V
GS
, GATE−TO−SOURCE VOLTAGE (V
)
I
S
, SOURCE CURRENT (A)
T
J
= 25°C
I
D
= 0.2 A
201612840
0
10
20
30
C, CAPACITANCE (pF)
C
iss
C
oss
C
rss
T
J
= 25°C
V
GS
= 0 V
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
T
J
= 25°CT
J
= 85°C
V
GS
= 0 V
0.1
Figure 10. Threshold Voltage with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
1251007550250−25−50
1.0
1.4
1.8
2.2
V
GS(TH)
, THRESHOLD VOLTAGE (V)
15
0
I
D
= 250 mA
1.2
1.6
2.0
2.4
1.3
1.7
2.1
2.5
1.1
1.5
1.9
2.3