Datasheet
2N7002K, 2V7002K
www.onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Junction−to−Ambient − Steady State (Note 3) R
q
JA
300
°C/W
Junction−to−Ambient − t ≤ 5 s (Note 3) 92
Junction−to−Ambient − Steady State (Note 4) 417
Junction−to−Ambient − t ≤ 5 s (Note 4) 154
3. Surface−mounted on FR4 board using 1 sq in pad size with 1 oz Cu.
4. Surface−mounted on FR4 board using 0.08 sq in pad size with 1 oz Cu.
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
60 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
71 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 60 V
T
J
= 25°C 1 mA
T
J
= 125°C 10
V
GS
= 0 V,
V
DS
= 50 V
T
J
= 25°C 100 nA
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±20 V ±10
mA
V
DS
= 0 V, V
GS
= ±10 V 450 nA
V
DS
= 0 V, V
GS
= ±5.0 V 150 nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.0 2.3 V
Negative Threshold Temperature
Coefficient
V
GS(TH)
/T
J
4.0 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= 10 V, I
D
= 500 mA 1.19 1.6 W
V
GS
= 4.5 V, I
D
= 200 mA 1.33 2.5
Forward Transconductance g
FS
V
DS
= 5 V, I
D
= 200 mA 530 mS
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1 MHz,
V
DS
= 20 V
24.5 45
pF
Output Capacitance C
OSS
4.2 8.0
Reverse Transfer Capacitance C
RSS
2.2 5.0
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 10 V;
I
D
= 200 mA
0.7
nC
Threshold Gate Charge Q
G(TH)
0.1
Gate−to−Source Charge Q
GS
0.3
Gate−to−Drain Charge Q
GD
0.1
SWITCHING CHARACTERISTICS, V
GS
= V (Note 6)
Turn−On Delay Time
t
d(ON)
V
GS
= 10 V, V
DD
= 25 V,
I
D
= 500 mA, R
G
= 25 W
12.2
ns
Rise Time t
r
9.0
Turn−Off Delay Time t
d(OFF)
55.8
Fall Time t
f
29
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 200 mA
T
J
= 25°C 0.8 1.2
V
T
J
= 85°C 0.7
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%
6. Switching characteristics are independent of operating junction temperatures