Datasheet

ManualsBrandsON Semiconductor ManualsDiscrete SemiconductorsMOSFET N, 60 V 300 mW SOT-23

April, 2015 − Rev. 13

1 Publication Order Number:

2N7002K/D

2N7002K, 2V7002K

Small Signal MOSFET

60 V, 380 mA, Single, N−Channel, SOT−23

Features

• ESD Protected

• Low R

DS(on)

• Surface Mount Package

• 2V Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

• Low Side Load Switch

• Level Shift Circuits

• DC−DC Converter

• Portable Applications i.e. DSC, PDA, Cell Phone, etc.

MAXIMUM RATINGS (T

= 25°C unless otherwise stated)

Rating

Symbol Value Unit

Drain−to−Source Voltage V

DSS

60 V

Gate−to−Source Voltage V

±20 V

Drain Current (Note 1)

Steady State 1 sq in Pad T

= 25°C

= 85°C

380

270

Drain Current (Note 2)

Steady State Minimum Pad T

= 25°C

= 85°C

320

230

Power Dissipation

Steady State 1 sq in Pad

Steady State Minimum Pad

420

300

Pulsed Drain Current (t

= 10 ms)

1.5 A

Operating Junction and Storage

Temperature Range

, T

STG

−55 to

+150

°C

Source Current (Body Diode) I

300 mA

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260 °C

Gate−Source ESD Rating

(HBM, Method 3015)

ESD 2000 V

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Surface−mounted on FR4 board using 1 sq in pad size with 1 oz Cu.

2. Surface−mounted on FR4 board using 0.08 sq in pad size with 1 oz Cu.

Device Package Shipping

†

ORDERING INFORMATION

2N7002KT1G 3000 / Tape & Reel

SIMPLIFIED SCHEMATIC

SOT−23

CASE 318

STYLE 21

704 MG

MARKING DIAGRAM

& PIN ASSIGNMENT

Drain

Gate

Source

www.onsemi.com

SOT−23

(Pb−Free)

60 V

1.6 W @ 10 V

DS(on)

MAX

380 mA

MAXV

(BR)DSS

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

2.5 W @ 4.5 V

Gate

Source

Drain

(Top View)

704 = Specific Device Code*

M = Date Code*

G = Pb−Free Package

2V7002KT1G 3000 / Tape & ReelSOT−23

(Pb−Free)

*Specific Device Code, Date Code or overbar

orientation and/or location may vary depend-

ing upon manufacturing location. This is a

representation only and actual devices may

not match this drawing exactly.

(Note: Microdot may be in either location)

Summary of content (6 pages)

PAGE 1
2N7002K, 2V7002K Small Signal MOSFET 60 V, 380 mA, Single, N−Channel, SOT−23 Features • • • • • ESD Protected Low RDS(on) Surface Mount Package 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com ID MAX 1.6 W @ 10 V 60 V 380 mA 2.5 W @ 4.
PAGE 2
N7002K, 2V7002K THERMAL CHARACTERISTICS Characteristic Junction−to−Ambient − Steady State (Note 3) Symbol Max Unit RqJA 300 °C/W Junction−to−Ambient − t ≤ 5 s (Note 3) 92 Junction−to−Ambient − Steady State (Note 4) 417 Junction−to−Ambient − t ≤ 5 s (Note 4) 154 3. Surface−mounted on FR4 board using 1 sq in pad size with 1 oz Cu. 4. Surface−mounted on FR4 board using 0.08 sq in pad size with 1 oz Cu.
PAGE 3
2N7002K, 2V7002K TYPICAL CHARACTERISTICS 9.0 V 8.0 V 7.0 V 6.0 V 1.2 1.2 5.0 V 4.5 V VGS = 10 V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 1.6 4.0 V 3.5 V 0.8 3.0 V 0.4 0.8 TJ = 25°C 0.4 2.5 V 0 2 4 6 0 4 6 Figure 2. Transfer Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) Figure 1. On−Region Characteristics VGS = 4.5 V TJ = 125°C 2.4 TJ = 85°C TJ = 25°C 2.0 1.6 TJ = −55°C 1.2 0.8 0.4 0 0 2 VGS, GATE−TO−SOURCE VOLTAGE (V) 3.2 2.
PAGE 4
2N7002K, 2V7002K TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) 30 C, CAPACITANCE (pF) Ciss 20 TJ = 25°C VGS = 0 V Coss 10 Crss 0 0 4 8 12 16 TJ = 25°C ID = 0.2 A 4 3 2 1 0 0 20 0.2 0.4 0.6 0.8 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge VGS(TH), THRESHOLD VOLTAGE (V) 10 VGS = 0 V IS, SOURCE CURRENT (A) 5 1 TJ = 85°C TJ = 25°C 0.1 0.01 0.
PAGE 5
2N7002K, 2V7002K TYPICAL CHARACTERISTICS RqJC(t) (°C/W) EFFECTIVE TRANSIENT THERMAL RESISTANCE 1000 Duty Cycle = 0.5 100 10 0.2 0.1 0.05 0.02 0.01 1 SINGLE PULSE 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10 100 1000 t, PULSE TIME (s) Figure 11. Thermal Response − 1 sq in pad RqJC(t) (°C/W) EFFECTIVE TRANSIENT THERMAL RESISTANCE 1000 Duty Cycle = 0.5 100 10 0.2 0.1 0.05 0.02 0.01 1 SINGLE PULSE 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.
PAGE 6
2N7002K, 2V7002K PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 b 0.25 e q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.