Data Sheet

2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor
Typical Performance Characteristics
2N7000 / 2N7002 / NDS7002A
01 45
0
0.5
1
1.5
2
V
23
, DRAIN-SOURCE VOLTAGE (V
I , DRAIN-SOURCE CURRENT (A)
9.0
4.0
8.0
3.0
7.0
= 10VV
GS
V
DS
D
5.0
6.0
-50 -25 0 25 50 75 100 125 150
0.5
0.75
1
1.25
1.5
1.75
2
T , JUNCTION TEMPERATURE (°C)
J
V
GS
= 10V
D
I = 500mA
-50 -25 0 25 50 75 100 125 150
0.8
0.85
0.9
0.95
1
1.05
1.1
T , JUNCTION TEMPERAT URE (°C)
th
V , N250$/,=(D
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J
D
I = 1 mA
DS
V = V
GS
0 0 .4 0.8 1.2 1 .6 2
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
GS
V =4.0V
D
7.0
4.5
10
5.0
6.0
9.0
8.0
0 0.4 0.8 1.2 1.6 2
0
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
J
T = 125°C
25°C
-55°C
D
V V V
GS
Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current
Figure 3. On-Resistance Variation
with Temperature
Figure 4. On-Resistance Variation with Drain
Current and Temperature
Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation with
Temperature
02 810
0
0.4
0.8
1.2
1.6
2
46
, GATE TO SOURCE VOLTAGE (VVV
VV = 109
DS
GS
J
T = -55°C
25°C
125°C
DS(on)
R , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
DS(on)
R , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
DS(on)
R , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
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