Data Sheet

2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor
Electrical Characteristics (Continued)
Note:
1. Pulse test : Pulse Width ≤ 300 μs, Duty Cycel ≤ 2 %.
Symbol Parameter Conditions Type Min. Typ. Max. Unit
Dynamic Characteristics
C
iss
Input Capacitance V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
All 20 50 pF
C
oss
Output Capacitance All 11 25
C
rss
Reverse Transfer
Capacitance
All 4 5
t
on
Turn-On Time V
DD
= 15 V, R
L
= 25 ,
I
D
= 500 mA,
V
GS
= 10 V, R
GEN
= 25
2N7000
10
ns
V
DD
= 30 V, R
L
= 150 ,
I
D
= 200 mA, V
GS
= 10 V,
R
GEN
= 25
2N7002
NDS7002A 20
t
off
Turn-Off Time V
DD
= 15 V, R
L
= 25 ,
I
D
= 500 mA, V
GS
= 10 V,
R
GEN
= 25
2N7000
10
ns
V
DD
= 30 V, R
L
= 150 ,
I
D
= 200 mA, V
GS
= 10 V,
R
GEN
= 25
2N7002
NDS7002A 20
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward
Current
2N7002 115 mA
NDS7002A 280
I
SM
Maximum Pulsed Drain-Source Diode Forward
Current
2N7002 0.8 A
NDS7002A 1.5
V
SD
Drain-Source Diode
Forward Voltage
V
GS
= 0 V,
I
S
= 115 mA
(1)
2N7002
0.88 1.5
V
V
GS
= 0 V,
I
S
= 400 mA
(1)
NDS7002A
0.88 1.2
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