Data Sheet

2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor
Electrical Characteristics (Continued)
Symbol Parameter Conditions Type Min. Typ. Max. Unit
On Characteristics
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 1 mA 2N7000 0.8 2.1 3 V
V
DS
= V
GS
, I
D
= 250 A
2N7002
NDS7002A
12.12.5
R
DS(ON)
Static Drain-Source
On-Resistance
V
GS
= 10 V,
I
D
= 500 mA
2N7000
1.2 5

V
GS
= 10 V,
I
D
= 500 mA, T
C
= 125°C
1.9 9
V
GS
= 4.5 V, I
D
= 75 mA 1.8 5.3
V
GS
= 10 V,
I
D
= 500 mA
2N7002
1.2 7.5
V
GS
= 10 V,
I
D
= 500 mA, T
C
= 100°C
1.7 13.5
V
GS
= 5 V,
I
D
= 50 mA
1.7 7.5
V
GS
= 5 V,
I
D
= 50 mA, T
C
= 100°C
2.4 13.5
V
GS
= 10 V,
I
D
= 500 mA
NDS7002A
1.2 2
V
GS
= 10 V,
I
D
= 500 mA, T
C
= 125°C
23.5
V
GS
= 5 V,
I
D
= 50 mA
1.7 3
V
GS
= 5 V,
I
D
= 50 mA, T
C
= 125°C
2.8 5
V
DS(ON)
Drain-Source On-Voltage V
GS
= 10 V,
I
D
= 500 mA
2N7000
0.6 2.5
V
V
GS
= 4.5 V,
I
D
= 75 mA
0.14 0.4
V
GS
= 10 V,
I
D
= 500 mA
2N7002
0.6 3.75
V
GS
= 5.0 V,
I
D
= 50 mA
0.09 1.5
V
GS
= 10 V,
I
D
= 500 mA
NDS7002A
0.6 1
V
GS
= 5.0 V,
I
D
= 50 mA
0.09 0.15
I
D(ON)
On-State Drain Current V
GS
= 4.5 V,
V
DS
= 10 V
2N7000
75 600
mA
V
GS
= 10 V,
V
DS
 2 V
DS(on)
2N7002
500 2700
V
GS
= 10 V,
V
DS
 2 V
DS(on)
NDS7002A
500 2700
g
FS
Forward
Transconductance
V
DS
= 10 V,
I
D
= 200 mA
2N7000
100 320
mS
V
DS
 2V
DS(ON)
,
I
D
= 200 mA
2N7002
80 320
V
DS
 2V
DS(ON)
,
I
D
= 200 mA
NDS7002A
80 320
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