Data Sheet

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2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor

Publication Order Number:

NDS7002A/D

October-2017, Rev. 3

2N7000 / 2N7002 / NDS7002A

N-Channel Enhancement Mode Field Effect Transistor

Features

• High Density Cell Design for Low R

DS(ON)

• Voltage Controlled Small Signal Switch

• Rugged and Reliable

• High Saturation Current Capability

Ordering Information

Part Number Marking Package Packing Method

Min Order Qty /

Immediate Pack

Qty

2N7000 2N7000 TO-92 3L Bulk 10000 / 1000

2N7000-D74Z

2N7000 TO-92 3L Ammo 2000 / 2000

2N7000-D75Z

2N7000 TO-92 3L Tape and Reel 2000 / 2000

2N7000-D26Z

2N7000 TO-92 3L Tape and Reel 2000 / 2000

2N7002 702 SOT-23 3L Tape and Reel 3000 / 3000

NDS7002A 712 SOT-23 3L Tape and Reel 3000 / 3000

Description

These N-channel enhancement mode field effect transis-

tors are produced using ON Semiconductor's

proprietary, high cell density, DMOS technology. These

products have been designed to minimize on-state

resistance while providing rugged, reliable, and fast

switching performance. They can be used in most

applications requiring up to 400 mA DC and can deliver

pulsed currents up to 2 A. These products are

particularly suited for low-voltage, low-cur-rent

applications, such as small servo motor control,

power MOSFET gate drivers, and other switching appli-

cations.

1. Source 2. Gate 3. Drain

TO-92

2N7002/NDS7002A

SOT-23

(TO-236AB)

Summary of content (8 pages)

PAGE 1
Features Description • • • • These N-channel enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A.
PAGE 2
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
PAGE 3
Symbol Parameter Conditions Type Min. Typ. Max. Unit 0.8 2.1 3 V 1 2.1 2.5 1.2 5 1.9 9 1.8 5.3 1.2 7.5 VGS = 10 V, ID = 500 mA, TC = 100°C 1.7 13.5 VGS = 5 V, ID = 50 mA 1.7 7.5 VGS = 5 V, ID = 50 mA, TC = 100°C 2.4 13.5 1.2 2 2 3.5 VGS = 5 V, ID = 50 mA 1.7 3 VGS = 5 V, ID = 50 mA, TC = 125°C 2.8 5 0.6 2.5 0.14 0.4 0.6 3.75 0.09 1.5 0.6 1 0.09 0.
PAGE 4
Symbol Parameter Conditions Type Min. Typ. Max. Unit pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance ton toff Turn-On Time Turn-Off Time VDS = 25 V, VGS = 0 V, f = 1.
PAGE 5
2N7000 / 2N7002 / NDS7002A 2 8.0 7.0 1 .5 6.0 1 5.0 0 .5 4.0 V GS =4.0V 4 .5 5 .0 2 .5 6 .0 2 7 .0 8 .0 1 .5 9 .0 10 1 I D , DRAIN-SOURCE CURRENT (A) 9.0 RDS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3 VGS = 10V 3.0 0 2 3 V DS , DRAIN-SOURCE VOLTAGE (V 1 4 0 .5 5 0 0 .8 1 .2 I D , DRA IN CURRENT (A) 1 .6 2 Figure 2. On-Resistance Variation with Gate Voltage and Drain Current 2 3 V GS = 10V I D = 500m A RDS(on) , NORMALIZED 1.75 1.5 1.25 1 0.75 0.5 -5 0 V GS 2 .
PAGE 6
2N7000 / 2N7002 / NDS7002A 1.075 2 I D = 250µA V GS 9 1 IS , REVERSE DRAIN CURRENT (A) 0 .5 1.05 1.025 1 0.975 0.95 0.925 -50 -25 0 25 50 75 100 TJ , JUNCTION TEM PERATURE (°C) 125 TJ = 1 2 5 ° C 0 .1 25°C 0 .0 5 -5 5 ° C 0 .0 1 0 .0 0 5 0 .0 0 1 0 .2 150 0 .4 V SD 1 .4 0 .6 0 .8 1 1 .2 , BODY DIODE FORW A RD VOLTAGE (V) Figure 8. Body Diode Forward Voltage Variation with Figure 7.
PAGE 7
6 2 5' / 1 LP LW P V 9 *6 9 V V PV P V V '& 6,1*/( 38/6( 7 & $ X , '5$,1 &855(17 $ ' , '5$,1 &855(17 $ ' 5' 9*6 9 7 & $ Figure 13.
PAGE 8
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