Data Sheet
2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N7000 / 2N7002 / NDS7002A Rev. 2.10 6
Typical Performance Characteristics (Continued)
2N7000 / 2N7002 / NDS7002A
-
50 -25 0 25
50
75 100
125
150
0.925
0.95
0.975
1
1.025
1.05
1.075
1.1
T , JUNCTION TEM PERATURE (°C)
BV'66 NORMALIZED
DRAIN-SOURCE BREAKDOWN VOLTAGE
J
D
I = 250µA
0.2 0.
41
.
4
0.001
0.005
0.01
0.05
0
.1
0.5
1
2
V
0
.6 0 .8 1
1.2
, BODY DIODE FORWA
RD VOLTAGE (V)
S
I , REVERSE DRAIN CURRENT (A)
VV
GS
9
J
T = 125°C
V
SD
25°C
-55°C
00
.4 1 .6 2
0
2
4
6
8
10
0.8 1.2
g
Q , *AT
E C
HARGE (nC)
V , GA E-SOURCE VOLTAGE (V)V
GS
D
I =500mA
DS
V =
25V
115mA
280
mA
123 3050
1
2
5
10
20
40
60
51020
VV
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
C
iss
f = 1 MH
z
GS
V = 0V
CC
oss
C
rss
G
D
S
V
DD
R
L
V
V
IN
OUT
V
GS
DUT
R
GEN
10%
50%
90%
10%
90%
90%
50%
Input, V
in
Output, V
out
t
on
t
off
t
d(off)
t
f
t
r
t
d(on)
Inverted
10%
Pulse Width
Figure 7. Breakdown Voltage Variation
with Temperature
Figure 8. Body Diode Forward Voltage Variation with
Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics
Figure 11.6ZLWFKLQJ7HVW&LUFXLW
Figure 12.
Switching Waveforms
0.
.