Data Sheet

2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor

2N7000 / 2N7002 / NDS7002A Rev. 2.10 1

August 2016

2N7000 / 2N7002 / NDS7002A

N-Channel Enhancement Mode Field Effect Transistor

Features

• High Density Cell Design for Low R

DS(ON)

• Voltage Controlled Small Signal Switch

• Rugged and Reliable

• High Saturation Current Capability

Ordering Information

Part Number Marking Package Packing Method

Min Order Qty /

Immediate Pack

Qty

2N7000 2N7000 TO-92 3L Bulk 10000 / 1000

2N7000_D74Z 2N7000 TO-92 3L Ammo 2000 / 2000

2N7000_D75Z 2N7000 TO-92 3L Tape and Reel 2000 / 2000

2N7000_D26Z 2N7000 TO-92 3L Tape and Reel 2000 / 2000

2N7002 702 SOT-23 3L Tape and Reel 3000 / 3000

NDS7002A 712 SOT-23 3L Tape and Reel 3000 / 3000

Description

These N-channel enhancement mode field effect transis-

tors are produced using Fairchild's proprietary, high cell

density, DMOS technology. These products have been

designed to minimize on-state resistance while providing

rugged, reliable, and fast switching performance. They

can be used in most applications requiring up to 400 mA

DC and can deliver pulsed currents up to 2 A. These

products are particularly suited for low-voltage, low-cur-

rent applications, such as small servo motor control,

power MOSFET gate drivers, and other switching appli-

cations.

1. Source 2. Gate 3. Drain

TO-92

2N7002/NDS7002A

SOT-23

(TO-236AB)