Datasheet

ManualsBrandsON SEMICONDUCTOR ManualsBJTs & IGBTsN/A 2 N 5886 NPN 2 N 5886 NPN

March, 2006 − Rev. 11

1 Publication Order Number:

2N5883/D

2N5883, 2N5884 (PNP)

2N5885, 2N5886 (NPN)

2N5884 and 2N5886 are Preferred Devices

Complementary Silicon

High−Power Transistors

Complementary silicon high−power transistors are designed for

general−purpose power amplifier and switching applications.

Features

• Low Collector−Emitter Saturation Voltage −

CE(sat)

= 1.0 Vdc, (max) at I

= 15 Adc

• Low Leakage Current

CEX

= 1.0 mAdc (max) at Rated Voltage

• Excellent DC Current Gain −

= 20 (min) at I

= 10 Adc

• High Current Gain Bandwidth Product −

= 4.0 MHz (min) at I

= 1.0 Adc

• Pb−Free Packages are Available*

MAXIMUM RATINGS (Note 1)

Rating Symbol Value Unit

Collector−Emitter Voltage

2N5883, 2N5885

2N5884, 2N5886

CEO

Vdc

Collector−Base Voltage

2N5883, 2N5885

2N5884, 2N5886

Vdc

Emitter−Base Voltage V

5.0 Vdc

Collector Current −

Continuous

Peak

Adc

Base Current I

7.5 Adc

Total Device Dissipation @ T

= 25°C

Derate above 25°C

200

1.15

W/°C

Operating and Storage Junction

Temperature Range

, T

stg

–65 to +200 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case

0.875 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Indicates JEDEC registered data. Units and conditions differ on some

parameters and re−registration reflecting these changes has been requested.

All above values most or exceed present JEDEC registered data.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com

Preferred devices are recommended choices for future use

and best overall value.

25 AMPERE COMPLEMENTARY

SILICON POWER TRANSISTOR

60 − 80 VOLTS, 200 WATTS

MARKING DIAGRAM

TO−204AA (TO−3)

CASE 1−07

STYLE 1

2N588x = Device Code

x = 3, 4, 5, or 6

G = Pb−Free Package

A = Assembly Location

YY = Year

WW = Work Week

MEX = Country of Origin

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

2N588xG

AYYWW

MEX

Summary of content (6 pages)

PAGE 1
2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices Complementary Silicon High−Power Transistors Complementary silicon high−power transistors are designed for general−purpose power amplifier and switching applications. Features 25 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 − 80 VOLTS, 200 WATTS • Low Collector−Emitter Saturation Voltage − • • • • http://onsemi.com VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc Low Leakage Current ICEX = 1.
PAGE 2
N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ
PAGE 3
2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) VCC − 30 V TURN−ON TIME RL + 2.0 V 3.0 10 0 TO SCOPE tr ≤ 20 ns RB tr ≤ 20 ns 2.0 −11 V 0.7 0.5 10 to 100 ms VCC TURN−OFF TIME RL +9.0 V 10 3.0 TO SCOPE tr ≤ 20 ns 0 RB tr ≤ 20 ns 10 to 100 ms − 30 V t, TIME ( s) μ DUTY CYCLE ≈ 2.0% −11 V TJ = 25°C IC/IB = 10 VCC = 30 V VBE(off) = 2 V 1.0 0.3 tr 0.2 0.1 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) td 0.07 0.05 0.03 VBB + 7.0 V 0.02 0.3 DUTY CYCLE ≈ 2.0% 0.5 0.7 1.0 2.0 3.0 5.0 7.
PAGE 4
2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 3000 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 3.0 ts 2.0 t, TIME ( s) μ TJ = 25°C VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 2000 C, CAPACITANCE (pF) 10 7.0 5.0 ts 1.0 0.7 0.5 tf 0.3 Cob Cib 1000 500 tf 0.2 0.1 0.3 0.5 0.7 Cib 700 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMPERES) 20 300 0.1 30 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) PNP DEVICES 2N5883 and 2N5884 VCE = 4.
PAGE 5
2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 2.0 2.0 TJ = 25°C TJ = 25°C 1.6 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.6 1.2 VBE(sat) @ IC/IB = 10 0.8 VBE @ VCE = 4 V 0.4 1.2 VBE(sat) @ IC/IB = 10 0.8 VBE @ VCE = 4 V 0.4 VCE(sat) @ IC/IB = 10 0 0.3 0.5 0.7 1.0 2.0 3.0 VCE(sat) @ IC/IB = 10 5.0 7.0 10 20 0 30 0.3 IC, COLLECTOR CURRENT (AMPERES) 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMPERES) Figure 12. “On” Voltages Figure 13.
PAGE 6
2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) PACKAGE DIMENSIONS TO−204 (TO−3) CASE 1−07 ISSUE Z A N C −T− E D SEATING PLANE K 2 PL 0.13 (0.005) U T Q M M Y M −Y− L V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO−204AA OUTLINE SHALL APPLY. 2 H G B M T Y 1 −Q− 0.13 (0.005) DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF −−− 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.