Datasheet

2N5883 2N5884 2N5885 2N5886
http://onsemi.com
4
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.01
0.02
0.5
0.2
0.1
0.05
0.02
r(t), EFFECTIVE TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 2000500
θ
JC
(t) = r(t) θ
JC
θ
JC
= 0.875°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
θ
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D = 0.5
0.2
0.05
0.02
SINGLE PULSE
0.1
1000
0.01
100
1.0
Figure 5. Active–Region Safe Operating Area
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
50
20
10
5.0
0.1
2.0 3.0 7.0 10 20 30 50 10
0
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION @ T
C
= 25°C
(SINGLE PULSE)
70
2.0
I
C
, COLLECTOR CURRENT (AMPERES)
T
J
= 200°C
CURVES APPLY BELOW RATED V
CEO
dc
500 µs
1ms
1.0
0.5
0.2
5.0
2N5883, 2N5885
2N5884, 2N5886
5ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
– V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 200C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
200C. T
J(pk)
may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
10
0.3
Figure 6. Turn–Off Time
I
C
, COLLECTOR CURRENT (AMPERES)
5.0
3.0
0.7
0.5
0.1
0.5 0.7 1.0 2.0 5.0 10 30
T
J
= 25°C
V
CC
= 30 V
I
C
/I
B
= 10
I
B1
= I
B2
0.2
t, TIME (s)µ
t
s
3.0
3000
0.1
Figure 7. Capacitance
V
R
, REVERSE VOLTAGE (VOLTS)
300
2.0 5.0 10 20 100500.2 0.5 1.0
C, CAPACITANCE (pF)
2000
700
500
T
J
= 25°C
C
ib
C
ob
1.0
7.0
20
1000
7.0
2N5883, 2N5884 (PNP)
2N5885, 2N5886 (NPN)
t
f
C
ib
C
ob
t
s
t
f
2.0
0.3
2N5883, 2N5884 (PNP)
2N5885, 2N5886 (NPN)