Datasheet

Complementary Silicon
High-Power Transistors
. . . designed for general–purpose power amplifier and switching
applications.
Low Collector–Emitter Saturation Voltage —
V
CE(sat)
= 1.0 Vdc, (max) at I
C
= 15 Adc
Low Leakage Current
I
CEX
= 1.0 mAdc (max) at Rated Voltage
Excellent DC Current Gain —
h
FE
= 20 (min) at I
C
= 10 Adc
High Current Gain Bandwidth Product —
f
τ
= 4.0 MHz (min) at I
C
= 1.0 Adc
MAXIMUM RATINGS (1)
Rating Symbol
2N5883
2N5885
2N5884
2N5886
Unit
Collector–Emitter Voltage V
CEO
60 80 Vdc
Collector–Base Voltage V
CB
60 80 Vdc
Emitter–Base Voltage V
EB
5.0 Vdc
Collector Current Continuous
Peak
I
C
25
50
Adc
Base Current I
B
7.5 Adc
Total Device Dissipation @ T
C
= 25C
Derate above 25C
P
D
200
1.15
Watts
W/C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–65 to +200 C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case θ
JC
0.875 C/W
(1) Indicates JEDEC registered data. Units and conditions differ on some parameters and
re–registration reflecting these changes has been requested. All above values most or
exceed present JEDEC registered data.
200
0
0 25 50 75 100 125 150 200
Figure 1. Power Derating
T
C
, CASE TEMPERATURE (°C)
P
D
, POWER DISSIPATION (WATTS)
175
100
75
50
125
150
25
175
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductor
Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 9
1 Publication Order Number:
2N5883/D
2N5883
2N5884
2N5885
2N5886
*ON Semiconductor Preferred Device
25 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60–80 VOLTS
200 WATTS
*
*
CASE 1–07
TO–204AA
(TO–3)
PNP
NPN

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