Data Sheet

2N3904 / MMBT3904 / PZT3904 — NPN General-Purpose Amplifier
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0 2
Absolute Maximum Ratings
(1), (2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty cycle operations.
Thermal Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Notes:
3. Device is mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch.
4. Device is mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm, mounting pad for the collector lead minimum 6 cm
2
.
Symbol Parameter Value Unit
V
CEO
Collector-Emitter Voltage 40 V
V
CBO
Collector-Base Voltage 60 V
V
EBO
Emitter-Base Voltage 6.0 V
I
C
Collector Current - Continuous 200 mA
T
J,
T
STG
Operating and Storage Junction Temperature Range -55 to 150 °C
Symbol Parameter
Maximum
Unit
2N3904 MMBT3904
(3)
PZT3904
(4)
P
D
Total Device Dissipation 625 350 1,000 mW
Derate Above 25°C 5.0 2.8 8.0 mW/°C
R
θJC
Thermal Resistance, Junction to Case 83.3 °C/W
R
θJA
Thermal Resistance, Junction to Ambient 200 357 125 °C/W