Datasheet

ManualsBrandsON Semiconductor ManualsDiscrete SemiconductorsPower Transistor, TO-204, NPN, 140V

 Semiconductor Components Industries, LLC, 2004

July, 2004 − Rev. 10

1 Publication Order Number:

2N3773/D

NPN 2N3773*, PNP 2N6609

Preferred Device

Complementary Silicon

Power Transistors

The 2N3773 and 2N6609 are PowerBase power transistors

designed for high power audio, disk head positioners and other linear

applications. These devices can also be used in power switching

circuits such as relay or solenoid drivers, DC−DC converters or

inverters.

Features

• Pb−Free Packages are Available**

• High Safe Operating Area (100% Tested) 150 W @ 100 V

• Completely Characterized for Linear Operation

• High DC Current Gain and Low Saturation Voltage

= 15 (Min) @ 8.0 A, 4.0 V

CE(sat)

= 1.4 V (Max) @ I

= 8.0 A, I

= 0.8 A

• For Low Distortion Complementary Designs

MAXIMUM RATINGS (Note 1)

Rating Symbol Value Unit

Collector − Emitter Voltage V

CEO

140 Vdc

Collector − Emitter Voltage V

CEX

160 Vdc

Collector − Base Voltage V

CBO

160 Vdc

Emitter − Base Voltage V

EBO

7 Vdc

Collector Current

− Continuous

− Peak (Note 2)

Adc

Base Current

− Continuous

− Peak (Note 2)

Adc

Total Power Dissipation @ T

= 25°C

Derate above 25°C

150

0.855

W/°C

Operating and Storage Junction

Temperature Range

, T

stg

−65 to +200 °C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

1. Indicates JEDEC Registered Data.

2. Pulse Test: Pulse Width = 5 ms, Duty Cycle  10%.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance,

Junction−to−Case



1.17 °C/W

**For additional information on our Pb−Free strategy and soldering details,

please download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

TO−204

CASE 1−07

*Preferred devices are recommended choices for future

use and best overall value.

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

http://onsemi.com

MARKING

DIAGRAM

16 A COMPLEMENTARY

POWER TRANSISTORS

140 V, 150 W

2Nxxxx

MEX

AYYWW

xxxx = 3773 or 6609

A = Assembly Location

YY = Year

WW = Work Week

Summary of content (6 pages)

PAGE 1
NPN 2N3773*, PNP 2N6609 Preferred Device Complementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, DC−DC converters or inverters. 16 A COMPLEMENTARY POWER TRANSISTORS 140 V, 150 W Features • • • • • http://onsemi.
PAGE 2
NPN 2N3773*, PNP 2N6609 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
PAGE 3
NPN 2N3773*, PNP 2N6609 NPN 300 200 PNP 300 200 150°C 150°C 100 100 − 55 °C 25°C 70 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 25°C 50 VCE = 4 V 30 20 50 30 20 10 10 7.0 5.0 0.2 0.3 7.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMPS) 10 − 55 °C 70 VCE = 4 V 5.0 0.2 0.3 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMPS) 2.0 1.6 IC = 4 A 1.2 IC = 8 A IC = 16 A 0.8 0.4 TC = 25°C 0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (AMPS) 2.0 3.0 2.0 1.
PAGE 4
NPN 2N3773*, PNP 2N6609 IC, COLLECTOR CURRENT (AMP) 30 20 10 s 40 s 10 5.0 3.0 2.0 100 s 200 s 1.0 ms dc 100 ms 1.0 0.5 0.3 0.2 0.1 0.05 0.03 3.0 500 ms BONDING WIRE LIMIT THERMAL LIMIT @ TC = 25°C, SINGLE PULSE SECOND BREAKDOWN LIMIT 200 300 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 7. Forward Bias Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.
PAGE 5
NPN 2N3773*, PNP 2N6609 PACKAGE DIMENSIONS TO−204 (TO−3) CASE 1−07 ISSUE Z NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO−204AA OUTLINE SHALL APPLY. A N C −T− E D K 2 PL 0.13 (0.005) U T Q M M Y DIM A B C D E G H K L N Q U V M −Y− L V SEATING PLANE 2 H G B M T Y 1 −Q− 0.13 (0.005) M INCHES MIN MAX 1.550 REF −−− 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.
PAGE 6
NPN 2N3773*, PNP 2N6609 PowerBase is a registered trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein.