Datasheet

NPN 2N3773*, PNP 2N6609
http://onsemi.com
4
30
3.0
Figure 7. Forward Bias Safe Operating Area
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
20
10
5.0
3.0
2.0
1.0
0.5
0.03
5.0 7.0 10 20 30 50 300
BONDING WIRE LIMIT
THERMAL LIMIT
@ T
C
= 25°C, SINGLE PULSE
SECOND BREAKDOWN LIMIT
70
0.3
0.2
I
C
, COLLECTOR CURRENT (AMP)
dc
10 s
100 s
100 ms
0.1
0.05
100 200
40 s
200 s
1.0 ms
500 ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation: i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 7 is based on T
J(pk)
= 200C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
< 200C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
100
80
60
40
0
20
0 40 80 120 160 200
Figure 8. Power Derating
T
C
, CASE TEMPERATURE (°C)
POWER DERATING FACTOR (%)
THERMAL
DERATING