Datasheet

2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS (1)
*Collector–Emitter Sustaining Voltage 2N3055A, MJ2955A
(I
C
= 200 mAdc, I
B
= 0) MJ15015, MJ15016
V
CEO(sus)
60
120
Vdc
Collector Cutoff Current
(V
CE
= 30 Vdc, V
BE(off)
= 0 Vdc) 2N3055A, MJ2955A
(V
CE
= 60 Vdc, V
BE(off)
= 0 Vdc) MJ15015, MJ15016
I
CEO
0.7
0.1
mAdc
*Collector Cutoff Current 2N3055A, MJ2955A
(V
CEV
= Rated Value, V
BE(off)
= 1.5 Vdc) MJ15015, MJ15016
I
CEV
5.0
1.0
mAdc
Collector Cutoff Current
(V
CEV
= Rated Value, V
BE(off)
= 1.5 Vdc, 2N3055A, MJ2955A
T
C
= 150 C) MJ15015, MJ15016
I
CEV
30
6.0
mAdc
Emitter Cutoff Current 2N3055A, MJ2955A
(V
EB
= 7.0 Vdc, I
C
= 0) MJ15015, MJ15016
I
EBO
5.0
0.2
mAdc
*SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(t = 0.5 s non–repetitive) 2N3055A, MJ2955A
(V
CE
= 60 Vdc) MJ15015, MJ15016
I
S/b
1.95
3.0
Adc
*ON CHARACTERISTICS (1)
DC Current Gain
(I
C
= 4.0 Adc, V
CE
= 2.0 Vdc)
(I
C
= 4.0 Adc, V
CE
= 4.0 Vdc)
(I
C
= 10 Adc, V
CE
= 4.0 Vdc)
h
FE
10
20
5.0
70
70
Collector–Emitter Saturation Voltage
(I
C
= 4.0 Adc, I
B
= 400 mAdc)
(I
C
= 10 Adc, I
B
= 3.3 Adc)
(I
C
= 15 Adc, I
B
= 7.0 Adc)
V
CE(sat)
1.1
3.0
5.0
Vdc
Base–Emitter On Voltage
(I
C
= 4.0 Adc, V
CE
= 4.0 Vdc)
V
BE(on)
0.7 1.8 Vdc
*DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product 2N3055A, MJ15015
(I
C
= 1.0 Adc, V
CE
= 4.0 Vdc, f = 1.0 MHz) MJ2955A, MJ15016
f
T
0.8
2.2
6.0
18
MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
C
ob
60 600 pF
*SWITCHING CHARACTERISTICS (2N3055A only)
RESISTIVE LOAD
Delay Time
2%
t
d
0.5 µs
Rise Time
(V
CC
= 30 Vdc, I
C
= 4.0 Adc,
I
B1
= I
B2
= 0.4 Adc,
t
p
= 25 µs Duty Cycle 2%
t
r
4.0 µs
Storage Time
I
B1
= I
B2
= 0.4 Adc,
t
p
= 25 µs Duty Cycle 2%
t
s
3.0 µs
Fall Time
p
= 25 µs Duty Cycle 2%
t
f
6.0 µs
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle 2%.
* Indicates JEDEC Registered Data. (2N3055A)