Manualshelf

Datasheet

ManualsBrandsON SEMICONDUCTOR ManualsBJTs & IGBTsN/A 2 N 3055 NPN 2 N 3055 NPN
1234567
1
Motorola Bipolar Power Transistor Device Data
. . . PowerBase complementary transistors designed for high power audio, stepping
motor and other linear applications. These devices can also be used in power
switching circuits such as relay or solenoid drivers, dc–to–dc converters, inverters, or
for inductive loads requiring higher safe operating area than the 2N3055 and MJ2955.
• Current–Gain — Bandwidth–Product @ I
C
= 1.0 Adc
f
T
= 0.8 MHz (Min) – NPN
= 2.2 MHz (Min) – PNP
• Safe Operating Area — Rated to 60 V and 120 V, Respectively
*MAXIMUM RATINGS
Rating Symbol
2N3055A
MJ2955A
MJ15015
MJ15016
Unit
Collector–Emitter Voltage V
CEO
60 120 Vdc
Collector–Base Voltage V
CBO
100 200 Vdc
Collector–Emitter Voltage Base
Reversed Biased
V
CEV
100 200 Vdc
Emitter–Base Voltage V
EBO
7.0 Vdc
Collector Current — Continuous I
C
15 Adc
Base Current I
B
7.0 Adc
Total Device Dissipation @ T
C
= 25 C
Derate above 25 C
P
D
115
0.65
180
1.03
Watts
W/ C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–65 to +200
C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Max Unit
Thermal Resistance, Junction to Case R
θJC
1.52 0.98
C/W
* Indicates JEDEC Registered Data. (2N3055A)
200
0
0 25 50 75 100 125 150 175 200
Figure 1. Power Derating
T
C
, CASE TEMPERATURE (
°
C)
MJ15015
MJ15016
P , AVERAGE POWER DISSIPATION (W)
D(AV)
150
100
50
2N3055A
MJ2955A
Preferred devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N3055A/D
Motorola, Inc. 1995
*Motorola Preferred Device
15 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60, 120 VOLTS
115, 180 WATTS
CASE 1–07
TO–204AA
(TO–3)
REV 1

Summary of content (7 pages)