Data Sheet

1N91x, 1N4x48, FDLL914, FDLL4x48
www.onsemi.com
2
ABSOLUTE MAXIMUM RATINGS (Values are at T
A
= 25°C unless otherwise noted) (Note 1)
Rating
Symbol Value Unit
Maximum Repetitive Reverse Voltage V
RRM
100 V
Average Rectified Forward Current I
O
200 mA
DC Forward Current I
F
300 mA
Recurrent Peak Forward Current I
f
400 mA
Non−repetitive Peak Forward Surge Current Pulse Width = 1.0 s I
FSM
1.0 A
Pulse Width = 1.0 ms
4.0 A
Storage Temperature Range T
STG
−65 to +200 °C
Operating Junction Temperature Range T
J
−55 to +175 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. These ratings are limiting values above which the serviceability of the diode may be impaired.
THERMAL CHARACTERISTICS
Parameter Symbol Max Unit
Power Dissipation P
D
500 mW
Thermal Resistance, Junction−to−Ambient
R
q
JA
300 °C
ELECTRICAL CHARACTERISTICS (Values are at T
A
= 25°C unless otherwise noted) (Note 2)
Symbol
Parameter Conditions Min Max Unit
V
R
Breakdown Voltage
I
R
= 100 mA
100 V
I
R
= 5.0 mA
75 V
V
F
Forward Voltage
914B / 4448 I
F
= 5.0 mA 0.62 0.72 V
916B I
F
= 5.0 mA 0.63 0.73 V
914 / 916 / 4148 I
F
= 10 mA 1.0 V
914A / 916A I
F
= 20 mA 1.0 V
916B I
F
= 20 mA 1.0 V
914B / 4448 I
F
= 100 mA 1.0 V
I
R
Reverse Leakage
V
R
= 20 V 0.025
mA
V
R
= 20 V, T
A
= 150°C 50
mA
V
R
= 75 V 5.0
mA
C
T
Total Capacitance
916/916A/916B/4448 V
R
= 0, f = 1.0 MHz 2.0 pF
914/914A/914B/4148 V
R
= 0, f = 1.0 MHz 4.0 pF
t
rr
Reverse Recovery Time I
F
= 10 mA, V
R
= 6.0 V (600 mA)
I
rr
= 1.0 mA, R
L
= 100 W
4.0 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Non−recurrent square wave P
W
= 8.3 ms.