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Data Sheet

ManualsBrandsON SEMICONDUCTOR ManualsDiodesStandard diode DO 204AH 100 V
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1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 — Small Signal Diode
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Rev. 2.8 2
Absolute Maximum Ratings
(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Note:
1. These ratings are limiting values above which the serviceability of the diode may be impaired.
Thermal Characteristics
Electrical Characteristics
(2)
Values are at T
A
= 25°C unless otherwise noted.
Note:
2. Non-recurrent square wave P
W
= 8.3 ms.
Symbol Parameter Value Unit
V
RRM
Maximum Repetitive Reverse Voltage 100 V
I
O
Average Rectified Forward Current 200 mA
I
F
DC Forward Current 300 mA
I
f
Recurrent Peak Forward Current 400 mA
I
FSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 s 1.0 A
Pulse Width = 1.0 μs4.0 A
T
STG
Storage Temperature Range -65 to +200 °C
T
J
Operating Junction Temperature Range -55 to +175 °C
Symbol Parameter
Max.
Unit
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448
P
D
Power Dissipation 500 mW
R
θJA
Thermal Resistance, Junction-to-Ambient 300 °C/W
Symbol Parameter Conditions Min. Max. Unit
V
R
Breakdown Voltage
I
R
= 100 μA100V
I
R
= 5.0 μA75V
V
F
Forward Voltage
914B / 4448 I
F
= 5.0 mA 0.62 0.72 V
916B I
F
= 5.0 mA 0.63 0.73 V
914 / 916 / 4148 I
F
= 10 mA 1.0 V
914A / 916A I
F
= 20 mA 1.0 V
916B I
F
= 20 mA 1.0 V
914B / 4448 I
F
= 100 mA 1.0 V
I
R
Reverse Leakage
V
R
= 20 V 0.025 μA
V
R
= 20 V, T
A
= 150°C50μA
V
R
= 75 V 5.0 μA
C
T
Total Capacitance
916/916A/916B/4448 V
R
= 0, f = 1.0 MHz 2.0 pF
914/914A/914B/4148 V
R
= 0, f = 1.0 MHz 4.0 pF
t
rr
Reverse Recovery Time
I
F
= 10 mA, V
R
= 6.0 V (600 mA)
I
rr
= 1.0 mA, R
L
= 100 Ω
4.0 ns