Datasheet

1
Photomicrosensor (Transmissive)
EE-SG3
Slot/Terminal Type (Slot Width: 3.6 mm)
• Dust resistant structure using two-color molding
Ordering Information
Photomicrosensor
Note: Order in multiples of minimum packing unit.
Ratings, Characteristics and Exterior Specifications
Absolute Maximum Ratings (Ta = 25°C)
*1. Refer to the temperature rating chart if the ambient temperature
exceeds 25°C.
*2. Pulse width ≤ 10
μ s, Repeated 100 Hz
*3. Complete soldering within 10 seconds.
Exterior Specifications
Electrical and Optical Characteristics (Ta = 25°C)
RoHS Compliant
Be sure to read Safety Precautions on Page 3.
Appearance
Sensing
method
Connecting
method
Sensing distance
Aperture size
(mm)
Output type Model
Minimum
packing unit
(Unit: pcs)
Transmissive
(slot type)
Terminal for
cord soldering
Both emitting
side and
detecting side
2 dia.
Phototransistor
EE-SG3
1
11.5
25.4
6.35
3.6 mm (Slot width)
Item Symbol Rated value Unit
Emitter
Forward current IF 50*
1
mA
Pulse forward
current
IFP 1*
2
A
Reverse voltage VR 4V
Detector
Collector-Emitter
voltage
VCEO 30 V
Emitter-Collector
voltage
V
ECO —V
Collector current IC 20 mA
Collector dissipation PC 100*
1
mW
Operating temperature Topr -25 to 85 °C
Storage temperature Tstg -30 to 100 °C
Soldering temperature Tsol 260*
3
°C
Connecting method Weight (g)
Material
Case Bottom plate
Terminal for cord
soldering
1.1 Polycarbonate PBTP
Item Symbol
Value
Unit Condition
MIN. TYP. MAX.
Emitter
Forward voltage VF —1.21.5VIF = 30 mA
Reverse current IR —0.0110μAVR = 4 V
Peak emission
wavelength
λ
P — 940 — nm IF = 20 mA
Detector
Light current IL 2—40mA
I
F = 15 mA,
V
CE = 10 V
Dark current ID — 2 200 nA
V
CE = 10 V,
0 lx
Leakage current ILEAK ———μA—
Collector-Emitter
saturated voltage
VCE
(sat)
—0.10.4V
I
F = 30 mA,
I
L = 1 mA
Peak spectral
sensitivity
wavelength
λ
P — 850 — nm VCE = 10 V
Rising time tr — 4 — μs
V
CC = 5 V,
R
L = 100 Ω
I
L = 5 mA
Falling time tf — 4 — μs
V
CC = 5 V,
R
L = 100 Ω
I
L = 5 mA