Datasheet

2
G3VM-@AY@/@DY@ MOS FET Relays
G
3
V
M
@
A
Y
@
/
@
D
Y
@
I
D
I
P
■Absolute Maximum Ratings (Ta = 25°C)
zStandard type, High senstive type
Note: 1. The dielectric strength between the input and output was checked by applying voltage between all pins as a group on the LED side and all
pins as a group on the light-receiving side.
Item Symbol
G3VM-41AY1
G3VM-41DY1
G3VM-41AY
G3VM-41DY
G3VM-61AY1
G3VM-61DY1
G3VM-61AY
G3VM-61DY
G3VM-201AY1
G3VM-201DY1
G3VM-201AY
G3VM-201DY
G3VM-351AY1
G3VM-351DY1
G3VM-351AY
G3VM-351DY
G3VM-401AY1
G3VM-401DY1
G3VM-401AY
G3VM-401DY
G3VM-601AY1
G3VM-601DY1
G3VM-601AY
G3VM-601DY
Unit Measurement conditions
Input
LED forward current IF 30 mA
Repetitive peak LED forward current IFP 1 A 100 μs pulses, 100 pps
LED forward current reduction rate ΔIF/°C −0.3 mA/°C Ta≥25°C
LED reverse voltage VR 5V
Connection temperature TJ 125 °C
Output
Load voltage (AC peak/DC) VOFF 40 60 200 350 400 600 V
Continuous load current (AC peak/DC) IO 2,000 500 250 100 120 90 mA
ON current reduction rate ΔIO/°C −20 −5 −2.5 −1 −1.2 −0.9 mA/°C Ta≥25°C
Pulse ON current lop 6 1.5 0.75 0.3 0.36 0.27 A t=100ms, Duty=1/10
Connection temperature TJ 125 °C
Dielectric strength between I/O
(See note 1.)
V
I-O 5,000 Vrms AC for 1 min
Ambient operating temperature Ta −40~+85°C
With no icing or
condensation
Ambient storage temperature Tstg −55~+125 °C
Soldering temperature − 260 °C 10s