Datasheet
TEA1832LTS All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 15 December 2014 14 of 23
NXP Semiconductors
TEA1832LTS
GreenChip SMPS control IC
9. Thermal characteristics
10. Characteristics
General
P
tot
total power dissipation T
amb
<75C - 0.29 W
T
stg
storage temperature 55 +150 C
T
j
junction temperature 40 +150 C
ESD
V
ESD
electrostatic discharge
voltage
Human Body
Model (HBM)
JEDEC class 2;
all pin
2500 +2500 V
Charged Device
Model (CDM)
JEDEC class 3;
all pins
750 +750 V
Table 3. Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Table 4. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-a)
thermal resistance from junction
to ambient
in free air; single layer
JEDEC test board
259 K/W
R
th(j-c)
thermal resistance from junction
to case
in free air; JEDEC test
board
152 K/W
Table 5. Characteristics
T
amb
=25
C; V
CC
= 20 V; all voltages are measured with respect to ground (pin 2); currents are positive when flowing into
the IC; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Supply voltage management (pin VCC)
V
startup
start-up voltage 20 22 24 V
V
th(UVLO)
undervoltage lockout
threshold voltage
9.4 10.5 11.6 V
V
hys
hysteresis voltage V
startup
-V
th(UVLO)
8.5 11.5 14.5 V
V
th(burst)
burst mode threshold
voltage
-11.1-V
V
th(burst-UVLO)
burst mode to UVLO
threshold voltage
difference
V
th(burst)
>V
th(UVLO)
[1]
0.5 0.6 0.7 V
V
rst(latch)
latched reset voltage 3.5 4.5 5.5 V
V
clamp(VCC)
clamp voltage on pin
VCC
latched protection mode;
I
CC
=15A
V
rst(latch)
+1 - - V
latched protection mode;
I
CC
=500A
--V
rst(latch)
+4 V