Datasheet

General
4.1 Absolute maximum ratings
NOTE
Functional operating conditions appear in the DC electrical
characteristics. Absolute maximum ratings are stress ratings
only, and functional operation at the maximum values is not
guaranteed. See footnotes in the following table for specific
conditions.
Stress beyond the listed maximum values may affect device
reliability or cause permanent damage to the device.
All the limits defined in the datasheet specification must be
honored together and any volilation to any one or more will not
gaurantee desired operation.
Table 1. Absolute maximum ratings
Symbol Parameter Conditions
1
Min Max Unit
V
DD
2
2.7 V - 5. 5V input supply voltage -0.3 5.8
3
V
V
REFH
3.3 V / 5.0 V ADC high reference voltage -0.3 5.8
3
V
I
INJPAD_DC_ABS
4
Continuous DC input current (positive /
negative) that can be injected into an I/O
pin
-3 +3 mA
V
IN_DC
Continuous DC Voltage on any I/O pin
with respect to V
SS
-0.8 5.8
5
V
I
INJSUM_DC_ABS
Sum of absolute value of injected currents
on all the pins (Continuous DC limit)
30 mA
T
ramp
6
Supply ramp rate 0.5 V/min 500 V/ms
T
A
7
Ambient temperature -40 125 °C
T
STG
Storage temperature -55 165 °C
V
IN_TRANSIENT
Transient overshoot voltage allowed on
I/O pin beyond V
IN_DC limit
6.8
8
V
1. All voltages are referred to V
SS
unless otherwise specified.
2. As V
DD
varies between the minimum value and the absolute maximum value the analog characteristics of the I/O and the
ADC will both change. See section I/O parameters and ADC electrical specifications respectively for details.
3. 60 s lifetime – No restrictions i.e. The part can switch.
10 hours lifetime – Device in reset i.e. The part cannot switch.
4. When input pad voltage levels are close to V
DD
or V
SS
, practically no current injection is possible.
5. While respecting the maximum current injection limit
6. Limit applies to both maximum absolute maximum ramp rate and typical operating conditions.
7. T
J
(Junction temperature)=135 °C. Assumes T
A
=125 °C for RUN mode
4
General
S32K1xx Data Sheet, Rev. 4, 06/2017
NXP Semiconductors
Preliminary
9