Datasheet

6.3.1.1 Flash timing specifications — commands
Table 21. Flash command timing specifications
Symbol Description
1
Min. Typ. Max. Unit Notes
t
rd1blk64k
t
rd1blk512k
Read 1s Block execution time
• 64 KB data flash
• 512 KB program flash
—
—
—
—
0.5
1.8
ms
ms
t
rd1sec2k
Read 1s Section execution time (2 KB flash) — — 75 μs
t
rd1sec4k
Read 1s Section execution time (4 KB flash) — — 100 μs
t
pgmchk
Program Check execution time — — 95 μs
t
pgm8
Program Phrase execution time — 90 150 μs
t
ersblk64k
t
ersblk512k
Erase Flash Block execution time
• 64 KB data flash
• 512 KB program flash
—
—
55
435
475
3700
ms
ms
2
t
ersscr
Erase Flash Sector execution time — 15 115 ms 2
t
pgmsec1k
Program Section execution time (1KB flash) — 5 — ms
t
rd1allx
Read 1s All Blocks execution time
—
—
—
—
—
—
2.2
4.4
6.6
ms
ms
ms
t
rdonce
Read Once execution time — — 30 μs
t
pgmonce
Program Once execution time — 90 — μs
t
ersall
Erase All Blocks execution time — 500 4200 ms 2
t
vfykey
Verify Backdoor Access Key execution time — — 35 μs
t
ersallu
Erase All Blocks Unsecure execution time — 500 4200 ms 2
t
pgmpart32k
t
pgmpart64k
Program Partition for EEPROM execution time
• 32 KB EEPROM backup
• 64 KB EEPROM backup (Non-Interleaved
DFlash)
• 64 KB EEPROM backup (Interleaved
DFlash)
—
—
70
71
250
—
—
ms
ms
ms
3, 4
t
setramff
t
setram32k
t
setram48k
t
setram64k
Set FlexRAM Function execution time:
• Control Code 0xFF
• 32 KB EEPROM backup
• 48 KB EEPROM backup
• 64 KB EEPROM backup
—
—
—
—
70
0.8
1.0
1.3
—
1.2
1.5
1.9
μs
ms
ms
ms
3, 4
t
eewr8b32k
t
eewr8b48k
t
eewr8b64k
Byte-write to FlexRAM execution time:
• 32 KB EEPROM backup
• 48 KB EEPROM backup
• 64 KB EEPROM backup
—
—
—
385
430
475
1700
1850
2000
μs
μs
μs
3, 4
t
eewr16b32k
t
eewr16b48k
16-bit write to FlexRAM execution time:
• 32 KB EEPROM backup
—
—
385
430
1700
1850
μs
μs
3, 4
Table continues on the next page...
Memory and memory interfaces
S32K1xx Data Sheet, Rev. 4, 06/2017
28
Preliminary
NXP Semiconductors