Datasheet

Appendix A Electrical Characteristics
MC9S08DZ60 Series Data Sheet, Rev. 4
Freescale Semiconductor 389
A.13 Flash and EEPROM
This section provides details about program/erase times and program-erase endurance for the Flash and
EEPROM memory.
Program and erase operations do not require any special power sources other than the normal V
DD
supply.
For more detailed information about program/erase operations, see Chapter 4, “Memory.”
Table A-17. Flash and EEPROM Characteristics
Num C Rating Symbol Min Typical Max Unit
1 — Supply voltage for program/erase
V
prog/erase
2.7 5.5 V
2—
Supply voltage for read operation
0 < f
Bus
< 8 MHz
0<f
Bus
< 20 MHz
V
Read
2.7 5.5 V
3—
Internal FCLK frequency
1
1
The frequency of this clock is controlled by a software setting.
f
FCLK
150 200 kHz
4 — Internal FCLK period (1/FCLK)
t
Fcyc
5 6.67 μs
5—
Byte program time (random location)
(2)
t
prog
9
t
Fcyc
6—
Byte program time (burst mode)
(2)
t
Burst
4
t
Fcyc
7—
Page erase time
2
2
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for
calculating approximate time to program and erase.
t
Page
4000
t
Fcyc
8—
Mass erase time
(2)
t
Mass
20,000
t
Fcyc
9C
Flash Program/erase endurance
3
T
L
to T
H
= –40°C to + 125°C
T = 25°C
3
Typical endurance for Flash and EEPROM is based on the intrinsic bit cell performance. For additional information on how
Freescale Semiconductor defines typical endurance, please refer to Engineering Bulletin EB619, Typical Endurance for
Nonvolatile Memory.
n
FLPE
10,000
—
—
100,000
—
—
cycles
10 C
EEPROM Program/erase endurance
3
T
L
to T
H
= –40°C to + 0°C
T
L
to T
H
= 0°C to + 125°C
T = 25°C
n
EEPE
10,000
50,000
—
—
—
100,000
—
—
—
cycles
11 C
Data retention
4
4
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25°C using the Arrhenius equation. For additional information on how Freescale Semiconductor defines typical data
retention, please refer to Engineering Bulletin EB618, Typical Data Retention for Nonvolatile Memory.
t
D_ret
15 100 — years