Datasheet

PEMD3_PIMD3_PUMD3_10 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 10 — 15 November 2009 4 of 11
NXP Semiconductors
PEMD3; PIMD3; PUMD3
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB with 65 μm copper strip line, standard footprint.
[3] Reflow soldering is the only recommended soldering method.
7. Characteristics
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
R
th(j-a)
thermal resistance from
junction to ambient
in free air
SOT363
[1]
--625K/W
SOT457
[2]
--417K/W
SOT666
[1][3]
--625K/W
Per device
R
th(j-a)
thermal resistance from
junction to ambient
in free air
SOT363
[1]
--416K/W
SOT457
[2]
--208K/W
SOT666
[1][3]
--416K/W
Table 8. Characteristics
T
amb
= 25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per transistor; for the PNP transistor with negative polarity
I
CBO
collector-base cut-off
current
V
CB
=50V; I
E
= 0 A - - 100 nA
I
CEO
collector-emitter
cut-off current
V
CE
=30V; I
B
=0A - - 1 μA
V
CE
=30V; I
B
=0A;
T
j
=150°C
--50μA
I
EBO
emitter-base cut-off
current
V
EB
=5V; I
C
= 0 A - - 400 μA
h
FE
DC current gain V
CE
=5V; I
C
=5mA 30 - -
V
CEsat
collector-emitter
saturation voltage
I
C
=10mA; I
B
= 0.5 mA - - 150 mV
V
I(off)
off-state input voltage V
CE
=5V; I
C
=100μA-1.10.8V
V
I(on)
on-state input voltage V
CE
=0.3V; I
C
=10mA 2.5 1.8 - V
R1 bias resistor 1 (input) 7 10 13 kΩ
R2/R1 bias resistor ratio 0.8 1 1.2
C
c
collector capacitance V
CB
=10V; I
E
=i
e
=0A;
f=1MHz
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TR1 (NPN) - - 2.5 pF
TR2 (PNP) - - 3 pF