Datasheet

PTVSxS1UR_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 10 January 2011 3 of 12
NXP Semiconductors
PTVSxS1UR series
400 W Transient Voltage Suppressor
5. Limiting values
[1] In accordance with IEC 61643-321 (10/1000 μs current waveform).
[2] For PTVS3V3S1UR: P
PPM
=350W
[1] Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses.
[2] Soldering point of cathode tab.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
P
PPM
rated peak pulse power
[1][2]
-400W
I
PPM
rated peak pulse current
[1]
-see
Table 9
and 10
I
FSM
Non-repetitive peak
forward current
single half-sine
wave; t
p
=8.3ms
-50A
T
j
junction temperature - 150 °C
T
amb
ambient temperature −55 +150 °C
T
stg
storage temperature −65 +150 °C
Table 6. ESD maximum ratings
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Max Unit
Per diode
V
ESD
electrostatic discharge voltage IEC 61000-4-2
(contact discharge)
[1][2]
-30kV
Table 7. ESD standards compliance
Standard Conditions
Per diode
IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact)
MIL-STD-883; class 3 (human body model) > 4 kV