Datasheet

PRTR5V0U2X_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 14 January 2008 2 of 11
NXP Semiconductors
PRTR5V0U2X
Ultra low capacitance double rail-to-rail ESD protection diode
1.4 Quick reference data
[1] Measured from pin 2 and 3 to ground.
[2] Measured from pin 4 to ground.
2. Pinning information
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 1. Quick reference data
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per diode
V
RWM
reverse standoff voltage - - 5.5 V
C
(I/O-GND)
input/output to ground
capacitance
f = 1 MHz;
V
(I/O-GND)
=0V
[1]
- 1 1.5 pF
C
sup
supply pin to ground
capacitance
f = 1 MHz;
V
CC
=0V
[2]
-16-pF
Table 2. Pinning
Pin Symbol Description Simplified outline Graphic symbol
1 GND ground
2 I/O 1 input/output 1
3 I/O 2 input/output 2
4V
CC
supply voltage
21
34
006aaa482
4
1
32
Table 3. Ordering information
Type number Package
Name Description Version
PRTR5V0U2X - plastic surface-mounted package; 4 leads SOT143B
Table 4. Marking codes
Type number Marking code
[1]
PRTR5V0U2X *R1