Datasheet
PRTR5V0U2AX All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 3 — 15 May 2012 4 of 12
NXP Semiconductors
PRTR5V0U2AX
Ultra low capacitance double rail-to-rail ESD protection diode
6. Characteristics
[1] Measured from pin 2, 3 and 4 to ground
[2] Measured from pin 4 to ground
[3] Measured from pin 2 and 3 to ground
Table 7. Characteristics
T
amb
=25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per channel
I
R
reverse current V
R
=3V
[1]
- < 1 100 nA
C
(I/O-GND)
input/output to ground
capacitance
f=1MHz;
V
(I/O-GND)
=0V
[3]
-1.8-pF
V
F
forward voltage I
F
=1mA -0.7-V
Zener diode
V
RWM
reverse standoff voltage - - 5.5 V
V
BR
breakdown voltage
[2]
6- 9V
C
sup
supply pin to ground
capacitance
f=1MHz;
V
CC
=0V
[2]
-16-pF
f=1MHz; T
amb
=25C
Fig 2. Input/output to ground capacitance as a function of input/output to ground
voltage; typical values
006aaa679
V
(I/O-GND)
(V)
054231
1.6
1.8
1.4
2.0
2.2
C
(I/O-GND)
(pF)
1.2