Datasheet

NXP Semiconductors
PMV65XP
20 V, single P-channel Trench MOSFET
PMV65XP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved
Product data sheet 12 February 2013 8 / 14
T
j
(°C)
-60 1801200 60
017aaa846
-1.0
-0.5
-1.5
-2.0
V
GS(th)
(V)
0
max
typ
min
I
D
= -0.25 mA; V
DS
= V
GS
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
017aaa847
V
DS
(V)
-10
-1
-10
2
-10-1
10
2
10
3
C
(pF)
10
C
iss
C
oss
C
rss
f = 1 MHz; V
GS
= 0 V
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Q
G
(nC)
0 10.07.52.5 5.0
017aaa848
-2
-3
-1
-4
-5
V
GS
(V)
0
I
D
= -2.8 A; V
DS
= -6 V; T
amb
= 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
017aaa137
V
GS
V
GS(th)
Q
GS1
Q
GS2
Q
GD
V
DS
Q
G(tot)
I
D
Q
GS
V
GS(pl)
Fig. 15. Gate charge waveform definitions